A silicon vector light sensor for proximity sensing applications

El-chami, Ibrahim; Zhuo, Dong Hao; Vosoogh-Grayli, Siamack; Bahreyni, Behraad

doi:10.1109/transducers.2017.7994013

Cited by 4 publications

(1 citation statement)

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“…Patterning the 3D samples is one big issue in MEMS research. 9 Practically, many present devices have vertical sidewalls. The wiring across the vertical sidewall is advantageous for utilizing the device top surface without making the shadow area.…”

Section: Introductionmentioning

confidence: 99%

Patterning vertical sidewall for optical assembly

Yamamoto

Kubo

Kumagai

et al. 2021

J. Optical Microsystems

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We report two approaches of the fabrication techniques for three-dimensional patterning across vertical sidewalls based on the photolithography. One approach applies the techniques of spray coating the photoresist and the angled exposure. The supposed application is the microenergy source summing the voltage of silicon (Si) photo cells. Since Si photo cell islands on the buried oxide are isolated from each other, the output voltage is summed well without interacting with the common substrate. Wiring using the vertical sidewalls minimizes the shadow region caused by the metal electrode. Another approach introduces a new sheet, which consists of polyvinyl alcohol (PVA) and polyethylene terephthalate layers. The photoresist film is spin-coated and pasted on the substrate making the bridge over the trench. The pattern of the cantilever overhanging the trench is transferred. Then, PVA is dissolved in water and the resist is developed. When the rinse water dries, the cantilever bends and adheres on the vertical sidewall. The minimum pattern width designed is 10 μm and is obtained on the vertical sidewall. © The Authors. Published by SPIE under a Creative Commons Attribution 4.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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Section: Introductionmentioning

confidence: 99%