1985
DOI: 10.1088/0022-3735/18/7/008
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A simple apparatus for film thickness measurements

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Cited by 9 publications
(3 citation statements)
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“…High-energy electron bombardment of the substrate was employed prior to and/or during evaporation-a procedure which has been shown to improve the epitaxial quality of the resultant film [ 5 ] . The thickness of the evaporated films, ranging from 500 to 3000 A, was measured using a multiple-beam Fizeau interferometric system [6]. The films were circular in shape with a diameter of 5 mm.…”
Section: Methodsmentioning
confidence: 99%
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“…High-energy electron bombardment of the substrate was employed prior to and/or during evaporation-a procedure which has been shown to improve the epitaxial quality of the resultant film [ 5 ] . The thickness of the evaporated films, ranging from 500 to 3000 A, was measured using a multiple-beam Fizeau interferometric system [6]. The films were circular in shape with a diameter of 5 mm.…”
Section: Methodsmentioning
confidence: 99%
“…where Y f is Young's modulus for the film. Equation (6) indicates that the thermal stress can be of either sign, and can be controlled by a judicious choice of substrate material and deposition temperature. Since the thermal expansion coefficients of NaF, LiF and NaCl are larger than that of the nickel [ 111, the thermal stress measured at room temperature is thus compressive (negative).…”
Section: Remarks On the Thermal Stressmentioning
confidence: 99%
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