A simple approach to determine preferential growth orientation using multiple seed crystals with random orientations and its utilization for seed optimization to restrain polycrystallization of SiGe bulk crystal

Azuma, Yukinaga; Usami, Noritaka; Fujiwara, Kozo; Ujihara, Toru; Nakajima, Kazuo

doi:10.1016/j.jcrysgro.2004.11.430

Cited by 15 publications

(6 citation statements)

References 19 publications

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“…18) The annealing temperature is closely related to the growth rate, which affects the determination of the preferential orientation of poly-Si films. 19) In the case of low growth rate, the (111) coverage with lower surface energy is larger than the coverage of other planes. On the other hand, when the growth rate is fast, the (001) coverage with a rough surface is increased.…”

mentioning

confidence: 99%

On the Controlling Mechanism of Preferential Orientation of Polycrystalline-Silicon Thin Films Grown by Aluminum-Induced Crystallization

Jung

Okada

Saito

et al. 2010

Appl. Phys. Express

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We investigated the controlling mechanism of preferential orientation in polycrystalline silicon (poly-Si) on glass substrate by Al-induced crystallization using an in situ monitoring system and electron backscattered diffraction (EBSD) measurements. Poly-Si film with (111)-preferential orientation was obtained by the layer exchange of the initial amorphous silicon (a-Si)/Al/glass into Al/poly-Si/glass. Cross-sectional EBSD revealed that Al crystal grains are much smaller than those of Si, and randomly oriented without any epitaxial relationship between (111)-oriented Si despite the fact that (111)-oriented Si is believed to originate from epitaxial growth on -Al 2 O 3 /Al(111). This suggests that another mechanism such as minimization of surface energy affects the formation of (111)-oriented poly-Si. #

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confidence: 99%

On the Controlling Mechanism of Preferential Orientation of Polycrystalline-Silicon Thin Films Grown by Aluminum-Induced Crystallization

Jung

Okada

Saito

et al. 2010

Appl. Phys. Express

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“…This proves that the melt-back growth of a-Ge stripes is initiated at respective Si-seeds and propagates laterally over the Si 3 N 4 film. It is noted that lateralgrowth along different crystal orientations has completed by the simultaneous RTA process, even though the growth-velocity of liquid phase epitaxy is known to depend on the crystal orientation (37). We speculate that the melt-back velocity dominated by the cooling-rate in our experiments is slow enough that lateral liquid phase epitaxial growth can follow for all crystal-directions.…”

Section: Si-substrate Free Epitaxy For Hybrid-orientation Goimentioning

confidence: 64%

(Invited) Hybrid-Formation of Ge-on-Insulator Structures on Si Platform by SiGe-Mixing-Triggered Rapid-Melting Growth --- A Road to Artificial Crystal ---

et al. 2013

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Single-crystal Ge layers on insulating films (GOI) are desired to achieve advanced 3-dimensional large-scale integrated circuits and high-performance thin-film transistors. We have developed the rapid-melting Ge growth seeded from Si substrates, which achieves chip-size (~cm length) GOI structures with (100), (110), and (111) orientations. Driving force to initiate the lateral growth over insulating films is clarified as the solidification temperature gradient originating from melting-induced Si-Ge mixing. Combination with the artificial Si micro-seed techniques and the rapid melting growth enables the formation of hybrid-orientation GOI arrays, i.e., (100), (110), and (111) stripes, on (100) Si platform. High hole mobility (~1000 cm2/Vs) in hybrid-orientation GOI is also demonstrated.

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“…As the Ge concentration increases, the Ge-Ge optic mode peak intensity increases, accompanied with a reduced peak width, indicating improvement in film crystallinity, particularly in the film with x = 0.94. Azuma et al [12] reported a preferential growth orientation for Si 1-x Ge x crystal at x > 0.9. Observation of the Ge-Si band in all the films indicates the formation of SiGe in the film.…”

Section: Resultsmentioning

confidence: 99%

Effect of Ge Incorporation on Bandgap and Photosensitivity of Amorphous SiGe Thin Films

Pethuraja¹,

Welser²,

Sood³

et al. 2012

MSA

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We investigated the structural and optical properties of amorphous-SiGe thin films synthesized via a low-cost, high-growth rate deposition method. Films were formed by e-beam evaporation of mixed pellets of Si and Ge. Film composition was varied by changing the weight ratio of Si and Ge pellets mixture. Films were amorphous with a composition uniform. Ge-rich films are in tensile stress, while Si-rich films are in compressive stress. As the Ge fraction increases (from 22 at.% to 94 at.%), the optical bandgap decreases (from 1.7 eV to 0.9 eV) and the photosensitivity of the films extends into IR band of solar spectrum. By changing the weighted ratio of the evaporation source mixture, the bandgap and optical sensitivity of a-SiGe films can be easily tuned. Our studies prove that a-SiGe films are a tunable absorber. This can be used for photo-detector, photovoltaic and microelectronic applications to extend the spectral response

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A simple approach to determine preferential growth orientation using multiple seed crystals with random orientations and its utilization for seed optimization to restrain polycrystallization of SiGe bulk crystal

Cited by 15 publications

References 19 publications

On the Controlling Mechanism of Preferential Orientation of Polycrystalline-Silicon Thin Films Grown by Aluminum-Induced Crystallization

On the Controlling Mechanism of Preferential Orientation of Polycrystalline-Silicon Thin Films Grown by Aluminum-Induced Crystallization

(Invited) Hybrid-Formation of Ge-on-Insulator Structures on Si Platform by SiGe-Mixing-Triggered Rapid-Melting Growth --- A Road to Artificial Crystal ---

Effect of Ge Incorporation on Bandgap and Photosensitivity of Amorphous SiGe Thin Films

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