A Simple Method To Synthesize Nanowires

Zhang, Yingjiu; Wang, Naiyan; Gao, Shang; He, Rongrui; Miao, Shiguang; Liu, Jun; Zhu, Jing; Zhang, Xueyi

doi:10.1021/cm0201697

Cited by 194 publications

(124 citation statements)

References 47 publications

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“…It is likely that the growth of W nanothorns followed a mechanism similar to the vapor-solid (VS) mechanism. [20] In our WWOs, W nanothorns grew on thin-W-layer-coated WO 3 nanowhiskers. We believe that Ni catalysts played an important role as nucleation sites when growing the uniform W coating layer on the WO 3 nanowhiskers, because we could not obtain uniform W coating without using Ni catalysts.…”

mentioning

confidence: 95%

A Novel Heteronanostructure System: Hierarchical W Nanothorn Arrays on WO₃ Nanowhiskers

2006

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The assembly of 1D nanostructures in the fabrication of nanoelectronic and nanophotonic devices is currently attracting significant attention. In particular, semiconductor and metal nanowires or nanorods are considered to be important building blocks in the fabrication of future nanodevices. Various types of nanowire heterostructures have been reported, including core/shell [1] and core/multishell nanocable structures, [2] coaxial nanowire heterojunctions, [3] epitaxial nanorod heterostructures, [4] and hierarchical heterostructures.[ [5g]Nanorods of transition metal oxides, such as WO 3, which have large surface areas and a high-aspect-ratio structure, are promising candidates for a vast range of applications including gas sensors, [6] photocatalysts, [7] electrochromic devices, [8] field-emission devices, [9] and solar-energy devices.[10] Because of the distinctive and promising properties of WO 3 , as-synthesized nanorods may also serve as functional building blocks in the fabrication of 3D nanostructures or multifunctional heteronanostructures. Recently Zhou et al. demonstrated the 3D growth of WO 3 nanowire networks using a thermal evaporation method.[11]W is a metal with a fairly low resistivity and a near-ideal midgap work function, and can be produced with a high refractivity through high-temperature processes. W can be used in metal gates in applications of complementary metal oxide semiconductor (CMOS) technology in nanodevices smaller than 100 nm.[12] W materials can be produced with various dimensions; 1D W nanowires have been found in particular to have useful electrical properties, such as efficient field-electron emission in a moderate electric field.[13] Although 1Dnanostructures of W and WO 3 have been studied extensively, few studies of W/WO 3 heteronanostructures have been reported.In this communication, we report the fabrication of a novel hierarchical heteronanostructure: single-crystal W nanothorns grown on WO 3 nanowhiskers (hereafter these heteronanostructures will be referred to as WWOs). In this WWO nanostructure, the WO 3 nanowhiskers were coated with thin W layers and W nanothorns grew on them. We used a two-step evaporation process to fabricate the hierarchical WWOs.In the first step, WO 3 nanowhiskers were deposited on a W plate by heating WO 3 powder at 1100°C on the substrate. Then, a mixture of WO 3 and graphite powder was used as the source material for the growth of the W nanothorns on the asprepared WO 3 nanowhiskers. Si powder was also heated with the substrate at 1100°C. We used the carbothermal reduction of WO 3 (WO 3 + C → WO x + CO 3-x ; x = 1-2) [14] and were able to expedite the further reduction of WO x species by using Si (WO x + Si → W + SiO x ) to produce W vapor. It is well known that W can be grown by Si reduction of W compounds.[15] The resulting W vapor was deposited on the WO 3 nanowhiskers to produce the WWO heteronanostructure. Our method for growing W nanomaterials is different to that used in previous studies: the thermal-heating of W films was the previ...

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confidence: 95%

A Novel Heteronanostructure System: Hierarchical W Nanothorn Arrays on WO₃ Nanowhiskers

2006

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“…The process known as oxide-assisted catalyst-free synthesis is one of the most promising because of its simplicity and high yield [14,18]. Si, SiO 2 , SiC and metal oxide nanowires have also been grown by this method [14,[19][20][21]. This technique is based on a CVD mechanism that involves SiO formation, via silicon active oxidation, and its reaction with nitrogen in the gas phase [14,22].…”

Section: Introductionmentioning

confidence: 99%

Kinetic study of the oxide‐assisted catalyst‐free synthesis of silicon nitride nanowires

Farjas

Pinyol

Rath

et al. 2006

Physica Status Solidi (a)

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The synthesis of Si 3 N 4 nanowires from the reaction of silicon nanoparticles with N 2 in the 1200-1440ºC temperature range is reported. The nitridation conditions are such that the reaction with nitrogen is favoured by the presence of silicon oxide in the particles and by the active oxidation of silicon without a catalyst. It is shown that the Si to Si 3 N 4 conversion rate depends on the amount of silicon particles used in the experiments and that, in general, the reaction slows down for greater amounts. This trend is explained by particle stacking, which restricts the exchange of gases between the furnace atmosphere and the atmosphere around the inner particles. In a first stage, local oxygen partial pressure increases around the inner particles and inhibits nitridation locally. If the amount of reactant Si nanoparticles is small enough, this extrinsic effect is avoided and the intrinsic nitridation kinetics can be measured.Experiments show that intrinsic kinetics does not depend on temperature.

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“…Various physical, chemical, or electrochemical methods [10][11][12][13] have been developed to prepare 1D ZnO. Among these fabrication methods, ZnO nanorods are most commonly grown by vapor phase methods like vapor-liquid-solid (VLS), chemical vapor transport, and thermal evaporation [11][12][13][14][15].…”

Section: Introductionmentioning

confidence: 99%

Preparation and Characterization of ZnO/TiO<sub>2</sub> Nanocomposite by Anodization and Hydrothermal Synthesis

Salima

Ghamri

2015

ILCPA

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ABSTRACT:ZnO nanorod arrays were deposited by hydrothermal process via an aqueous solution with ammonia and Zinc nitrate as inorganic precursors, using TiO 2 nanotube templates formed in HF solution by anodization method. The effect of NH 3 .H 2 O and ZnNO 3 concentration on ZnO nanorods morphology and crystallinity were investigated. XRD demonstrates that ZnO nanorods are wurtzite crystal structure preferentially oriented in c-axis direction. The length and the diameter of the ZnO nanorod range from 1,1 m to 3,4 m and from 250 to 500 nm respectively.

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A Simple Method To Synthesize Nanowires

Cited by 194 publications

References 47 publications

A Novel Heteronanostructure System: Hierarchical W Nanothorn Arrays on WO₃ Nanowhiskers

A Novel Heteronanostructure System: Hierarchical W Nanothorn Arrays on WO₃ Nanowhiskers

Kinetic study of the oxide‐assisted catalyst‐free synthesis of silicon nitride nanowires

Preparation and Characterization of ZnO/TiO<sub>2</sub> Nanocomposite by Anodization and Hydrothermal Synthesis

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A Simple Method To Synthesize Nanowires

Cited by 194 publications

References 47 publications

A Novel Heteronanostructure System: Hierarchical W Nanothorn Arrays on WO3 Nanowhiskers

A Novel Heteronanostructure System: Hierarchical W Nanothorn Arrays on WO3 Nanowhiskers

Kinetic study of the oxide‐assisted catalyst‐free synthesis of silicon nitride nanowires

Preparation and Characterization of ZnO/TiO<sub>2</sub> Nanocomposite by Anodization and Hydrothermal Synthesis

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A Novel Heteronanostructure System: Hierarchical W Nanothorn Arrays on WO₃ Nanowhiskers

A Novel Heteronanostructure System: Hierarchical W Nanothorn Arrays on WO₃ Nanowhiskers