A simple model for low energy ion-solid interactions

Abstract

A simple analytical model for ion-solid interactions, suitable for low energy beam depositions, is reported. An approximation for the nuclear stopping power is used to obtain the analytic solution for the deposited energy in the solid. The ratio of the deposited energy in the bulk to the energy deposited in the surface yields a ceiling for the beam energy above which more defects are generated in the bulk resulting in defective films. The numerical evaluations agree with the existing results in the literature.

Nanoscale precipitation patterns in carbon–nickel nanocomposite thin films: Period and tilt control via ion energy and deposition angle

“…19,20,22,23,33,43 During film growth, short-range ballistic displacement of atoms takes place in a near-surface region ͑ϳ1 -2 nm thick͒ due to hyperthermal ion impacts. 28,29 Thermodynamic forces lead to a precipitation of metal carbide or pure metal phase in the carbon matrix. [24][25][26]33,43,44 Carbon ions continue to be deposited onto the carbon matrix or onto the clusters themselves.…”

“…[24][25][26][27] Incoming energetic ions induce atomic displacements along their path due to collisions. 28,29 This results in collision-induced random walks of atoms in the near surface layer defined by the ion range. 25 A constant supply of ions results in a steady-state movement of the surface.…”

Diamond nucleation enhancement by direct low-energy ion-beam deposition

“…For 100-keV Ar-ion implantation, most of the ion energy is deposited in the bulk. While in the present case of 100-eV ions, energy is primarily deposited near the surface region, 27 and the surface damage induced is responsible for the enhanced nucleation. Nevertheless, the enhancement induced by surface damages is limited, as the nucleation density is still two orders of magnitude lower than the value of 10 8 cm Ϫ2 induced by conventional diamond powder scratching.…”