A Simple, Non-Destructive Optical Technique to Characterize Ion-Implanted Semiconductor Wafers

Abstract

A simple, non-destructive technique to characterize the properties of ion-implanted semiconductor wafers is described. The method consists of measuring the infrared attenuated total reflection (ATR) spectrum of the implanted layer/air interface and fitting it with a calculated spectrum which takes account of the free carrier density profile and any possible residual damage and/or amorphization. The results obtained on boron and +F implanted Si wafers, annealed at different temperatures in a rapid thermal annealer, are compared with their respective SIMS profiles.