A nondestructive infrared attenuated total reflection technique for measuring activated carrier density profiles and elastic scattering rates of ion implanted and annealed semiconductor wafers is described. The results obtained using this technique on annealed B and BF2 implanted Si wafers are presented and compared with the respective secondary ion mass spectroscopy and spreading resistance profiles.

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A simple, non-destructive technique to characterize the properties of ion-implanted semiconductor wafers is described. The method consists of measuring the infrared attenuated total reflection (ATR) spectrum of the implanted layer/air interface and fitting it with a calculated spectrum which takes account of the free carrier density profile and any possible residual damage and/or amorphization. The results obtained on boron and +F implanted Si wafers, annealed at different temperatures in a rapid thermal annealer, are compared with their respective SIMS profiles.