Abstract:Abstract-The explanation of GaAs metal-semiconductor fieldeffect transistor (MESFET) operation often involves the use of simplistic analytical formulas, which serve to obscure the more subtle physics of device action. We consider here a simple onedimensional (1-D) model for GaAs MESFET's, which avoids more confusing numerical modeling schemes, yet still facilitates an analysis of the physical functionality of the device. The model takes into account current saturation due to either velocity saturation or chann… Show more
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