A simple parameter extraction method for ultra-thin oxide MOSFETs

McLarty, P.K.; Cristoloveanu, S.; Faynot, O.; Misra, Veena; Hauser, John R.; Wortman, J. J.

doi:10.1016/0038-1101(94)00248-e

Cited by 75 publications

(45 citation statements)

References 5 publications

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“…From Table 2, we see that the 1,0 values are found surprisingly negative for UTB at 77 K but are still negligible relative to SD , for GRC at both 300 K and 77 K. However, such surprising results have been observed in an early study about SOI MOSFET according to McLarty et al [38]. One may argue that a second order dependence on GS may be responsible for the nonlinearity of the Y-function as mentioned in [38] and more recently by Cros et al [5].…”

Section: Behavior Of the Low Field Mobility At Low Temperaturementioning

confidence: 64%

“…One may argue that a second order dependence on GS may be responsible for the nonlinearity of the Y-function as mentioned in [38] and more recently by Cros et al [5]. This approach was efficient for a very thin gate oxide (<10 nm) where interface scattering is a dominant issue such that the mobility is found to be more degraded at the top interface than at the bottom interface, indicating that defects are more numerous at the top channel region [39].…”

Section: Behavior Of the Low Field Mobility At Low Temperaturementioning

confidence: 88%

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Y-Function Analysis of the Low Temperature Behavior of Ultrathin Film FD SOI MOSFETs

Karsenty

Chelly

2014

Active and Passive Electronic Components

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The respective transfer characteristics of the ultrathin body (UTB) and gate recessed channel (GRC) device, sharing same W/L ratio but having a channel thickness of 46 nm, and 2.2 nm respectively, were measured at 300 K and at 77 K. By decreasing the temperature we found that the electrical behaviors of these devices were radically opposite: if for UTB device, the conductivity was increased, the opposite effect was observed for GRC. The low field electron mobility and series resistance SD values were extracted using a method based on Y-function for both the temperatures. If SD low values were found for UTB, very high values (>1 MΩ) were extracted for GRC. Surprisingly, for the last device, the effective field mobility is found very low (<1 cm 2 /Vs) and is decreasing by lowering the temperature. After having discussed the limits of this analysis.This case study illustrates the advantage of the Yanalysis in discriminating a parameter of great relevance for nanoscale devices and gives a coherent interpretation of an anomalous electrical behavior.

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Section: Behavior Of the Low Field Mobility At Low Temperaturementioning

confidence: 64%

Section: Behavior Of the Low Field Mobility At Low Temperaturementioning

confidence: 88%

Y-Function Analysis of the Low Temperature Behavior of Ultrathin Film FD SOI MOSFETs

Karsenty

Chelly

2014

Active and Passive Electronic Components

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“…The 2 nd order mobility degradation factor is extracted using a technique introduced by McLarty et al [12]. The starting point of the technique is the drain current linear model (low V DS and high V GS ) for strongly inverted MOSFETs …”

Section: Resultsmentioning

confidence: 99%

“…Fig. 9 shows the measured θ 2 as a function of t OX for the 1.4 nm, 2.5 nm and 6 nm nMOSFETs together with measurements taken from 3.5 nm and 10 nm gate oxide MOSFETs in literature [12]. It should be noted that since these MOSFETs are not co-fabricated, they will exhibit different θ SR values due to different surface roughness amplitudes and correlation lengths i.e.…”

Section: Resultsmentioning

confidence: 99%

“…Gate dielectric scaling and higher substrate doping has increased the transverse electric fields and hence, mobility degradation from surface roughness scattering. A 2 nd order mobility degradation model was developed to account for mobility reduction related to (V GS -V TH ) 2 at high vertical fields where V TH is the threshold voltage [12]. The effective mobility, µ EFF can be expressed as…”

Section: Introductionmentioning

confidence: 99%

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Linearity and mobility degradation in strained Si MOSFETs with thin gate dielectrics

Alatise

Olsen

O'Neill

2010

Solid-State Electronics

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Electron Transport at the SiC/SiO2 Interface

Ouisse

1997

phys. stat. sol. (a)

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The properties of electron transport in silicon carbide inversion layers are reviewed. Emphasis is put on the thermally‐activated conductivity which prevails at low and room temperatures. The impact of interface disorder on the performance of SiC MOSFETs is discussed in detail. These transport properties are related to the conclusions that can be drawn from the electrical characterization of the SiC/SiO2 interface. High temperature operation is discussed more briefly.

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A simple parameter extraction method for ultra-thin oxide MOSFETs

Cited by 75 publications

References 5 publications

Y-Function Analysis of the Low Temperature Behavior of Ultrathin Film FD SOI MOSFETs

Y-Function Analysis of the Low Temperature Behavior of Ultrathin Film FD SOI MOSFETs

Linearity and mobility degradation in strained Si MOSFETs with thin gate dielectrics

Electron Transport at the SiC/SiO2 Interface

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