A Simplified Method for Extracting Parasitic Inductances of MOSFET-Based Half-Bridge Circuit

Abstract

To better predict the high-frequency switching operation of the half-bridge circuit in power converters, the value of the parasitic elements of these devices must be accurately evaluated. A new MOSFET-based half-bridge circuit parasitic inductances extraction method using two-port S-parameters is proposed in this paper. By changing the terminal connection of the half-bridge circuit, we can treat it as several different two-port networks, and then detailed network analysis can be performed on it. The parasitic parameters of multi-terminal actual circuits such as half-bridge can be extracted accurately and quickly through the simple measurement steps and calculations of the proposed method.

Design and implementation of electrical engineering experiment based on the Arduino platform

“…Infinite to a capacitor can store the received energy in it to keep the output voltage at a constant value. In the ideal state, we consider the value of capacitance infinite, so the MOSFET tube, during the conduction, the infinite capacitor can keep the output voltage at a constant value [5]. However, the capacitor value cannot be infinite in the actual circuit.…”