A simplifiediyansmission-line based crosstalk noise model for on-chip RLC wiring

Agarwal, K.; Sylvester, D.; Blaauw, D.

doi:10.1109/aspdac.2004.1337715

Cited by 4 publications

(5 citation statements)

References 6 publications

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“…Figure 2 shows an example of noise waveform in the case that capacitive and inductive crosstalk noises simultaneously appear. Supposing two lossless coupled transmission lines, the propagating voltage wave is represented as the sum of even and odd mode waves [2]. The times of flight for capacitive and inductive coupling are given by the Eqs.…”

Section: Crosstalk Noise and Process Advancementmentioning

confidence: 99%

Quantitative Prediction of On-Chip Capacitive and Inductive Crosstalk Noise and Tradeoff between Wire Cross-Sectional Area and Inductive Crosstalk Effect

Ogasahara¹,

Hashimoto²,

Onoye³

2007

IEICE Transactions on Fundamentals of Electronics, Communicatio

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Capacitive and inductive crosstalk noises are expected to be more serious in advanced technologies. However, capacitive and inductive crosstalk noises in the future have not been concurrently and sufficiently discussed quantitatively, though capacitive crosstalk noise has been intensively studied solely as a primary factor of interconnect delay variation. This paper quantitatively predicts the impact of capacitive and inductive crosstalk in prospective processes, and reveals that interconnect scaling strategies strongly affect relative dominance between capacitive and inductive coupling. Our prediction also makes the point that the interconnect resistance significantly influences both inductive coupling noise and propagation delay. We then evaluate a tradeoff between wire cross-sectional area and worst-case propagation delay focusing on inductive coupling noise, and show that an appropriate selection of wire cross-section can reduce delay uncertainty at the small sacrifice of propagation delay.

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Section: Crosstalk Noise and Process Advancementmentioning

confidence: 99%

Quantitative Prediction of On-Chip Capacitive and Inductive Crosstalk Noise and Tradeoff between Wire Cross-Sectional Area and Inductive Crosstalk Effect

Ogasahara¹,

Hashimoto²,

Onoye³

2007

IEICE Transactions on Fundamentals of Electronics, Communicatio

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“…Recently, there has been a lot of research concerned with coupled RLC line analysis and modelling. A crosstalk noise model based on propagation modes, characteristics impedances and time of flight was presented in [2], but only a lossless lines case was considered. Even if an extrapolation to a low loss approximation is given when R<2Z 0 (R: line resistance and Z 0 : characteristics impedance), it cannot be applied to Very Deep Sub-Micron (VDSM) technologies.…”

Section: Introductionmentioning

confidence: 99%

Crosstalk noise determination for non-identical lines

Deschacht

Quéré

2009

2009 4th International Conference on Design &Amp; Technology of Integrated Systems in Nanoscal Era

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VLSI circuits signal integrity is an emerging concern in high performance integrated circuits. We proposed once an analytical expression to calculate the noise amplitude of a two coupled-line RLC interconnects network; this expression being derived from an analytical transmission line model based on the modes propagating through it. However, this expression supposed a perfect symmetry between both the two coupled lines. When system is dissymmetrical, crosstalk amplitude cannot be evaluated in function of the propagation modes anymore. In this paper, a relation permitting to calculate the noise amplitude of such systems is exposed when the dissymmetry results from different lines geometries. It is described depending on a lines width dissymmetrical factor, the amplitude determined when the system is completely symmetrical; results showing an excellent agreement with SPICE simulations.

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“…A number of simple crosstalk noise models have been proposed: [2,3,4] propose formulae for noise but they do not consider the coupling inductance between interconnects. A RLC crosstalk noise model based on propagation modes, characteristics impedances and times of flight is presented in [5], but only the case of lossless lines is considered. An extrapolation to a low loss approximation (R<2Z o ) is given but does not correspond to Very Deep Sub-Micron Technologies (DVSM); R corresponding to the line resistance and Z o to the line characteristic impedance.…”

Section: Introductionmentioning

confidence: 99%