A simultaneous increase in the ZT and the corresponding critical temperature of p-type Bi0.4Sb1.6Te3by a combined strategy of dual nanoinclusions and carrier engineering

Xiao, Ye; Yang, Jing; Jiang, Qinghui; Fu, Liangwei; Luo, Yubo; Liu, Ming; Zhang, Dan; Zhang, Mingyang; Li, Weixin; Peng, Jiangying; Chen, F.

doi:10.1039/c4ta04558k

Cited by 39 publications

(19 citation statements)

References 20 publications

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“…For all previously reported bulk and nanoundoped BiSbTe, the zT drops below 1 for temperatures above 500 K (Figure e) due to bipolar contributions to the thermal conductivity (Figure b) and Seebeck coefficient (not shown) . For doped‐BiSbTe, zT = 1 has also never been achieved in this temperature range (Figure f), due to the impaired carrier mobility μ from doping and unreduced κ l . Compared with state‐of‐the‐art undoped BiSbTe, the zT peak of our Pb‐BiSbTe nanocomposite is notably shifted to higher temperature, by more than 100 K (Figure e).…”

Section: Band Structure and Materials Parameters Used In Bte Simulatiomentioning

confidence: 61%

“…Indeed, aliovalent Pb, with less valence electrons than Bi(Sb), can act as an extrinsic acceptor for p‐type BiSbTe . Similarly, doping with other elements (Ag, In, Cu, Zn) may allow further tuning of the carrier concentration, thus optimizing the power factor and shifting the peak zT toward higher temperatures, but at the cost of carrier mobility. Carrier concentration can also be modified through defect engineering (e.g., Sb/Te antisites), although limitedly .…”

Section: Band Structure and Materials Parameters Used In Bte Simulatiomentioning

confidence: 99%

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Nanocomposites from Solution‐Synthesized PbTe‐BiSbTe Nanoheterostructure with Unity Figure of Merit at Low‐Medium Temperatures (500–600 K)

Agne

Feng

et al. 2017

Advanced Materials

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A scalable, low-temperature solution process is used to synthesize precursor material for Pb-doped Bi Sb Te thermoelectric nanocomposites. The controllable Pb-doping leads to the increase in the optical bandgap, thus delaying the onset of bipolar conduction. Furthermore, the solution synthesis enables nanostructuring, which greatly reduces thermal conductivity. As a result, this material exhibits a zT = 1 over the 513-613 K range.

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Section: Band Structure and Materials Parameters Used In Bte Simulatiomentioning

confidence: 61%

Section: Band Structure and Materials Parameters Used In Bte Simulatiomentioning

confidence: 99%

Nanocomposites from Solution‐Synthesized PbTe‐BiSbTe Nanoheterostructure with Unity Figure of Merit at Low‐Medium Temperatures (500–600 K)

Agne

Feng

et al. 2017

Advanced Materials

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“…The rhombohedral V 2 VI 3 materials are a hotbed of defect engineering, the success of which make them the benchmark TE materials for solid‐state cooling and low/mid temperature waste heat harvesting . In particular, the high performance of n‐type V 2 VI 3 alloys is subject to a delicate balance between strong textures and multiscale microstructures, which is a challenge for materials synthesis and processing.…”

Section: Introductionmentioning

confidence: 99%

Synergistic Compositional–Mechanical–Thermal Effects Leading to a Record High zT in n‐Type V₂VI₃ Alloys Through Progressive Hot Deformation

Zhang

et al. 2018

Adv Funct Materials

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Here a progressive hot deformation procedure that endows the benchmark n-type V 2 VI 3 thermoelectric materials with short range disorder (multiple defects), long range order (crystallinity), and strong texture (nearly orientation order) is reported. Not only it is rare for these structural features to coexist but also these structural features elicit the synergistic compositionalmechanical-thermal effects, i.e., a profound interplay among the counts, magnitude, and temperature of hot deformation in relation to the as formed point defects, dislocations, textures, strain clusters, and distortions. Using progressively larger die sets and relatively low hot deformation temperature, rich multiscale microstructures concurrently with a high level of texture comparable to that of zone melted ingot are obtained. The strong donor-like effect significantly increases the majority carrier concentration, suppressing the detrimental bipolar effect. In addition, the multiscale microstructures yield an ultralow lattice thermal conductivity ≈0.31 W m −1 K −1 at 405 K. A record zT ≈ 1.3 at 450 K are attained in progressively hot deformed n-type Bi 1.95 Sb 0.05 Te 2.3 Se 0.7 through the synergistic effects. These results not only promise a better pairing between n-type and p-type legs in device fabrication but also bring our understanding of n-type V 2 VI 3 alloys and hot deformation technique to a new level.device material's figure of merit, zT = σS 2 T/κ, where T, σ, S, and κ are the absolute temperature, the electrical conductivity, the Seebeck coefficient, and the total thermal conductivity (including the lattice component κ ph and the charge carrier component κ el ), respectively. Toward higher zT, defect engineering is invoked to (i) improve the power factor PF = σS 2 through tuning band structure, [2,3] texture, [4,5] and grain boundary; [6,7] and (ii) suppress the κ ph through multiscale microstructures. [8,9] While point defects are of vital importance, [10,11] it is the synergy among various kinds of defects in defect engineering that underlies the high zT.The rhombohedral V 2 VI 3 materials are a hotbed of defect engineering, [12] the success of which make them the benchmark TE materials for solid-state cooling [8,13,14] and low/mid temperature waste heat harvesting. [15][16][17][18][19][20][21][22][23][24] In particular, the high performance of n-type V 2 VI 3 alloys is subject to a delicate balance between strong textures and multiscale microstructures, which is a challenge for materials synthesis and processing. Making the task more challenging, the performance-enhancing mechanisms proved effective in p-type V 2 VI 3 alloys turned out to be less so in n-type V 2 VI 3 alloys. Compared to the p-type counterpart, the n-type V 2 VI 3 material tends to be electrically more anisotropic: the electrical conductivity anisotropy of Thermoelectrics

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“…Unfortunately, these monocrystalline or orientation polycrystalline products by unidirectional crystal growth methods present poor mechanical properties and, thus, high waste in the device manufacturing process . In order to solve these problems, powder metallurgy techniques have been used to improve the strength of products, and at the same time the grain size is refined to decrease the lattice thermal conductivity to increase the ZT value . A maximum ZT value of 1.5 was obtained for p‐type Bi 2 Te 3 nanocrystals bulks by the melt‐spinning and spark plasma sintering (SPS) method because of the significant reduction of lattice thermal conductivity .…”

Section: Introductionmentioning

confidence: 99%

The Effect of Porosity and Milling Induced Defects on the Thermoelectric Properties of p‐Type Bi₂Te₃‐Based Bulks

Zhang

Fan

et al. 2016

Adv Eng Mater

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The p-type (Bi,Sb) 2 Te 3 bulks are prepared from ball-milling powders by resistance pressure sintering method and their thermoelectric properties are investigated as a function of ball milling time. Prolonging milling time would introduce more anti-site defects, interaction of vacancies and antisite defect, grain-boundaries and interface defects, leading to lower carrier concentration and mobility. The peak value of ZT ¼ 1.0 is achieved at 300 K for the 5 h sample. When the testing temperature is over 323 K, the ZT value of the 0 h sample is higher than that of the 5 h sample. The effect of porosity on the thermoelectric properties is also investigated by effective medium theory. As the porosity increased, the electrical resistivity increases and the thermal conductivity decrease.

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A simultaneous increase in the ZT and the corresponding critical temperature of p-type Bi_0.4Sb_1.6Te₃by a combined strategy of dual nanoinclusions and carrier engineering

Cited by 39 publications

References 20 publications

Nanocomposites from Solution‐Synthesized PbTe‐BiSbTe Nanoheterostructure with Unity Figure of Merit at Low‐Medium Temperatures (500–600 K)

Nanocomposites from Solution‐Synthesized PbTe‐BiSbTe Nanoheterostructure with Unity Figure of Merit at Low‐Medium Temperatures (500–600 K)

Synergistic Compositional–Mechanical–Thermal Effects Leading to a Record High zT in n‐Type V₂VI₃ Alloys Through Progressive Hot Deformation

The Effect of Porosity and Milling Induced Defects on the Thermoelectric Properties of p‐Type Bi₂Te₃‐Based Bulks

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A simultaneous increase in the ZT and the corresponding critical temperature of p-type Bi0.4Sb1.6Te3by a combined strategy of dual nanoinclusions and carrier engineering

Cited by 39 publications

References 20 publications

Nanocomposites from Solution‐Synthesized PbTe‐BiSbTe Nanoheterostructure with Unity Figure of Merit at Low‐Medium Temperatures (500–600 K)

Nanocomposites from Solution‐Synthesized PbTe‐BiSbTe Nanoheterostructure with Unity Figure of Merit at Low‐Medium Temperatures (500–600 K)

Synergistic Compositional–Mechanical–Thermal Effects Leading to a Record High zT in n‐Type V2VI3 Alloys Through Progressive Hot Deformation

The Effect of Porosity and Milling Induced Defects on the Thermoelectric Properties of p‐Type Bi2Te3‐Based Bulks

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A simultaneous increase in the ZT and the corresponding critical temperature of p-type Bi_0.4Sb_1.6Te₃by a combined strategy of dual nanoinclusions and carrier engineering

Synergistic Compositional–Mechanical–Thermal Effects Leading to a Record High zT in n‐Type V₂VI₃ Alloys Through Progressive Hot Deformation

The Effect of Porosity and Milling Induced Defects on the Thermoelectric Properties of p‐Type Bi₂Te₃‐Based Bulks