A single-chip Si-bipolar 1.6 GHz VCO with integrated bias network

Zannoth, M.; Fenk, J.; Springer, Andreas; Weigel, Robert

doi:10.1109/rfic.1999.805252

Cited by 9 publications

(3 citation statements)

References 2 publications

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“…Despite much effort, a design for integrating VCOs still remains a main problem due to the stringent phase-noise requirements in standards, such as TIA/EIA IS-98. Recently, many research results for the VCO with 1.5-2 GHz using SiGe HBT or Si CMOS have been published [1][2][3][4][5]. However, with the regard the characteristics of high frequency and low noise, InGaP/GaAs HBT has several advantages over Si-based devices for VCO.…”

Section: Introductionmentioning

confidence: 99%

“…Filter designs using the coplanar waveguide (CPW) structure are now increasingly in demand for the expanding technologies of mobile communications, satellite systems, and monolithic microwave integrated circuits (MMICs) [1][2][3]. Many microwave applications accomplished with CPW structure have advantages such as low dispersive effects, ease of positioning the signal line in reference to ground plane, simple fabrication, and lack of the need for perforating holes [4 -6].…”

Section: Introductionmentioning

confidence: 99%

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Design of an ultra‐low‐noise 1.75‐GHz VCO using InGaP/GaAs HBT technology

Jeon¹,

Lee²

2004

Micro & Optical Tech Letters

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An integrated voltage‐controlled oscillator (VCO) operating at 1.75 GHz is designed using the InGaP/GaAs HBT process. The proposed noise‐removal circuit and FR‐4 substrate structure in this paper show an improved characteristic of phase noise and a smaller VCO dimension, respectively. The frequency‐tuning range of the VCO is about 200 MHz and the phase noise at 120‐KHz offset is −119.3 dBc/Hz. The power consumption of the VCO core is 11.2 mW at 2.8‐V supply voltage and the output power is −2 dBm. The calculated figure of merit (FOM) is 191.7, which shows the best performance, as compared with the previous FET or HBT VCOs. © 2004 Wiley Periodicals, Inc. Microwave Opt Technol Lett 41: 196–198, 2004; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20090

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Design of an ultra‐low‐noise 1.75‐GHz VCO using InGaP/GaAs HBT technology

Jeon¹,

Lee²

2004

Micro & Optical Tech Letters

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“…Traditionally, (integrated) RF VCOs are realized with bipolar devices due to their low high-frequency noise and low flicker noise corner frequency [1][2][3][4]. Recently, several publications on CMOS VCOs have appeared [5][6][7][8], reporting excellent phase noise performance at large frequency offsets.…”

mentioning

confidence: 99%