A single-ended TG based 8T SRAM cell with increased data stability and less delay

Tripathy, Debi Prasad; Manasneha, Tarangini; Das, Varun

doi:10.1109/rteict.2017.8256805

Cited by 2 publications

(1 citation statement)

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“…As a result of advancements in VLSI manufacturing process, there will be invariably rise in the mode of chip integration. It has been brought about a consistently expanding exchange for bulkier on-chip information storage with enhanced stability, reliability and competency [1]. The portable silicon chip gadgets consist of integrated memory, which substitutes an extensive portion of the system-on-chip (SoC).…”

Section: Introductionmentioning

confidence: 99%

Design of 8T CNTFET SRAM for Ultra-Low Power Microelectronic Applications

Chandra*¹,

Kishore²,

Giri³

et al. 2019

IJRTE

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 Abstract: At around 10nm, direct source to drain tunneling in COS-MOS technology constituting fundamental limitations that in turn hold back their suitability for modern electronic appliances chiefly as far as area, energy competency and performance. In advanced electronic appliances, memory constituents play a crucial part. Almost in every digital appliance, memory component is mostly preferred due to its unique potentiality to withhold information. Due to rapid technology advancements, architecture of SRAM is truly tested as far as delay, energy efficiency and stability. Traditional 6T memory unit experiences passage transistor conflict arises the contrast among read balance and write competence. The paper that proposed here contrasts the performance of distinctive CNTFET based 8T memory unit architectures like Traditional and Dual-Port with respect to write delay, read delay and power efficiency like static and dynamic. 8T SRAM bit cell is designed with 32nm CNTFET technology using HSPICE Tool. From the HSPICE simulation results, Dual-Port CNTFET SRAM has provide better read and write delays were reduced by ~8.8% and ~16.3%, static power and dynamic power by ~12.5% and ~42.2% respectively than conventional one.

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Section: Introductionmentioning

confidence: 99%