A single layer hydrogen silsesquioxane (HSQ) based lift-off process for germanium and platinum

Passi, Vikram; Lecestre, Aurélie; Krzeminski, Christophe; Larrieu, Guilhem; Dubois, Emmanuel; Raskin, Jean‐Pierre

doi:10.1016/j.mee.2009.11.022

Cited by 13 publications

(4 citation statements)

References 22 publications

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“…Similar rough edge was also resulted for the liftoff of Au using ma-N 1405 resist. 9 Passi et al 10 achieved liftoff of Ge and Pt (both resistant to HF) with hydrogen silsesquioxane (HSQ) resist using HF, for which the application is limited since HF attacks most metals.…”

Section: Introductionmentioning

confidence: 99%

Lift-off with solvent for negative resist using low energy electron beam exposure

Dey

Cui

2014

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Lift-off and direct etch are the two most popular pattern transfer methods for electron beam lithography. For some applications negative resist would offer significantly less exposure time than positive one. Unfortunately, lift-off using negative resist is very challenging because the resist profile is typically positively tapered due to electron forward scattering, and upon exposure, negative resist is cross-linked and thus insoluble in solvents. Here, the authors will show that low energy exposure can circumvent both issues simultaneously, and the authors achieved liftoff of Cr with polystyrene resist using a solvent xylene. Moreover, low energy exposure offers proportionally higher resist sensitivity. Lastly, since low energy electrons are mostly stopped inside the resist layer, radiation damage to the sublayer is greatly reduced. Thus, the current method may be employed to fabricate metal nanostructures on top of an organic conducting layer.

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Section: Introductionmentioning

confidence: 99%

Lift-off with solvent for negative resist using low energy electron beam exposure

Dey

Cui

2014

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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“…A germanium (Ge) layer will act as implantation mask to protect the BOX in the anchoring regions. Ge is easily removed by immersing in a preheated solution of hydrogen peroxide at 55°C without affecting any other materials [18]. Once implantation is carried out, the implanted buried silicon-dioxide can be etched selectively with the use of wet HF or preferably VHF as shown in Figure 2b.…”

Section: Vhf Etch Of Implanted Silicon Dioxidementioning

confidence: 99%

Anisotropic vapor HF etching of silicon dioxide for Si microstructure release

Passi¹,

Södervall²,

Nilsson³

et al. 2012

Microelectronic Engineering

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Damages are created in a sacrificial layer of silicon dioxide by ion implantation to enhance the etch rate of silicon-dioxide in liquid and vapor phase hydrofluoric acid. The etch rate ratio between implanted and unimplanted silicon dioxide is more than 150 in vapor hydrofluoric acid (VHF). This feature is of interest to greatly reduce the underetch of microelectromechanical systems anchors.Based on the experimentally extracted etch rate of unimplanted and implanted silicon dioxide, the patterning of the sacrificial layer can be predicted by simulation.

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“…A common method of pattern definition is electron beam lithography (EBL), which is suitable for defining very fine structured patterns or patterns with a high demand on precision and small feature size. For EBL systems, single lift-off processes have previously been made with the resists Poly(methyl methacrylate) (PMMA) [4,5] or Hydrogen silsesquioxane (HSQ) [6]. Recent developments in resist technology has lead to chemically amplified (CAR) and chemically semi-amplified (CSAR) resists being used for EBL applications and in pattern transfer processing [7].…”

Section: Introductionmentioning

confidence: 99%

Single Layer Lift-Off of CSAR62 for Dense Nanostructured Patterns

2023

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Lift-off processing is a common method of pattern transfer for different nanofabrication applications. With the emergence of chemically amplified and semi-amplified resist systems, the possibilities for pattern definition via electron beam lithography has been widened. We report a reliable and simple lift-off process for dense nanostructured pattern in CSAR62. The pattern is defined in a single layer CSAR62 resist mask for gold nanostructures on silicon. The process offers a slimmed down pathway for pattern definition of dense nanostructures with varied feature size and an up to 10 nm thick gold layer. The resulting patterns from this process have been successfully used in metal assisted chemical etching applications.

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A single layer hydrogen silsesquioxane (HSQ) based lift-off process for germanium and platinum

Cited by 13 publications

References 22 publications

Lift-off with solvent for negative resist using low energy electron beam exposure

Lift-off with solvent for negative resist using low energy electron beam exposure

Anisotropic vapor HF etching of silicon dioxide for Si microstructure release

Single Layer Lift-Off of CSAR62 for Dense Nanostructured Patterns

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