Zone plates are diffractive optics commonly used in X-ray microscopes. Here, we present a wet-chemical approach for fabricating high aspect ratio Pd/Si zone plate optics aimed at the hard X-ray regime. A Si zone plate mold is fabricated via metal-assisted chemical etching (MACE) and further metalized with Pd via electroless deposition (ELD). MACE results in vertical Si zones with high aspect ratios. The observed MACE rate with our zone plate design is 700 nm/min. The ELD metallization yields a Pd density of 10.7 g/cm 3 , a value slightly lower than the theoretical density of 12 g/cm 3 . Fabricated zone plates have a grid design, 1:1 line-to-space-ratio, 30 nm outermost zone width, and an aspect ratio of 30:1. At 9 keV X-ray energy, the zone plate device shows a first order diffraction efficiency of 1.9%, measured at the MAX IV NanoMAX beamline. With this work, the possibility is opened to fabricate X-ray zone plates with low-cost etching and metallization methods.

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X-ray zone plates made from gold are common optical components used in X-ray imaging experiments. These nanostructures are normally fabricated using a combination of electron-beam lithography and gold electroplating with cyanide gold baths. In this study, we present a gold electroplating process in a miniaturized gold-suplphite bath. The miniaturization is enabled by on-chip reference plating areas with well defined sizes, offering a reliable way to control the height of the structures by carefully choosing the plating time at a given current density in accordance with a calibration curve. Fabricated gold zone plates were successfully used in X-ray imaging experiments with synchrotron radiation. Although gold electroplating of nanostructures is a well-established method, details about the actual process are often missing in the literature. Therefore, we think that our detailed descriptions and explanations will be helpful for other researchers that would like to fabricate similar structures.

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Lift-off processing is a common method of pattern transfer for different nanofabrication applications. With the emergence of chemically amplified and semi-amplified resist systems, the possibilities for pattern definition via electron beam lithography has been widened. We report a reliable and simple lift-off process for dense nanostructured pattern in CSAR62. The pattern is defined in a single layer CSAR62 resist mask for gold nanostructures on silicon. The process offers a slimmed down pathway for pattern definition of dense nanostructures with varied feature size and an up to 10 nm thick gold layer. The resulting patterns from this process have been successfully used in metal assisted chemical etching applications.