A Small-Signal Model Extraction and Optimization Method for AlGaN/GaN HEMT Up to 110 GHz

Zhu, Guiqiang; Chang, Chen; Xu, Yuehang; Al-Saman, Amgad A.; Lin, Fujiang

doi:10.1109/icta48799.2019.9012880

Cited by 7 publications

(3 citation statements)

References 6 publications

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“…The power and frequency performance of GaN HEMTs widen their application in high-speed R.F. integrated circuits [2,3] . Modeling of the 2DEG electron concentration within the quantum well has been a hot issue for decades.…”

Section: Introductionmentioning

confidence: 99%

Analytical model of non-uniform charge distribution within the gated region of GaN HEMTs

Al-Saman,

Ryndin,

Zhang

et al. 2023

J. Semicond.

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A physics-based analytical expression that predicts the charge, electrical field and potential distributions along the gated region of the GaN HEMT channel has been developed. Unlike the gradual channel approximation (GCA), the proposed model considers the non-uniform variation of the concentration under the gated region as a function of terminal applied voltages. In addition, the model can capture the influence of mobility and channel temperature on the charge distribution trend. The comparison with the hydrodynamic (HD) numerical simulation showed a high agreement of the proposed model with numerical data for different bias conditions considering the self-heating and quantization of the electron concentration. The analytical nature of the model allows us to reduce the computational and time cost of the simulation. Also, it can be used as a core expression to develop a complete physics-based transistor Ⅳ model without GCA limitation.

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Section: Introductionmentioning

confidence: 99%

Analytical model of non-uniform charge distribution within the gated region of GaN HEMTs

Al-Saman,

Ryndin,

Zhang

et al. 2023

J. Semicond.

Self Cite

View full text Add to dashboard Cite

show abstract

“…In particular, as the operating frequency increases, a small-signal equivalent circuit that reflects the S-parameter according to the frequency well is required. Until now, many studies on GaN HEMT modeling have been successfully published [16][17][18][19][20][21][22][23][24][25]. Recently, some papers dealing with GaN HEMT small-signal modeling up to 110 GHz have reported on millimeter-wave monolithic microwave integrated circuit (MMIC) design [22][23][24][25].…”

Section: Introductionmentioning

confidence: 99%

“…Until now, many studies on GaN HEMT modeling have been successfully published [16][17][18][19][20][21][22][23][24][25]. Recently, some papers dealing with GaN HEMT small-signal modeling up to 110 GHz have reported on millimeter-wave monolithic microwave integrated circuit (MMIC) design [22][23][24][25]. However, depending on the process, there was no consideration of the coupling effect that may appear with the source via process.…”

Section: Introductionmentioning

confidence: 99%

A New GaN HEMT Small-Signal Model Considering Source via Effects for 5G Millimeter-Wave Power Amplifier Design

Kim

2021

Applied Sciences

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A new gallium nitride (GaN) high electron mobile transistor (HEMT) small-signal model is proposed considering source via effects. In general, GaN HEMTs adopt a source via structure to reduce device degradation due to self-heating. In this paper, the modified drain-source capacitance (Cds) circuit considering the source via structure is proposed. GaN HEMTs fabricated using a commercial 0.15 μm GaN HEMT process are measured with a 67 GHz vector network analyzer (VNA). The fabricated device is an individual source via (ISV) type. As a result, it is difficult to predict the measured S12 in the conventional small-signal model equivalent circuit. This causes errors in maximum stable gain/maximum available gain (MSG/MAG) and stability factor (K), which are important for circuit design. This paper proposes a small-signal equivalent circuit that adds the drain-source inductance to the drain-source capacitance considering the source via structure. The proposed equivalent circuit better reproduces the measured S12 without compromising the accuracy of other S-parameters up to 67 GHz and improves the accuracy of MSG/MAG and K. It is expected that the proposed model can be utilized in a large-signal model for 5G millimeter-wave GaN HEMT power amplifier design in the future.

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A scalable large‐signal model with self‐heating effect based on a hybrid‐scaling rule for GaN high‐electron‐mobility transistors

2021

Int J Numerical Modelling

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In this paper, a novel hybrid‐scaling rule for GaN high‐electron‐mobility transistors (HEMTs) scalable large‐signal model with self‐heating effect is proposed. Due to the complex parasitic characteristics of large gate‐width GaN HEMT devices, nonlinear scaling rules are used to consider the dependence of the extrinsic inductances, extrinsic resistances, and thermal resistance on the gate width. In addition, a drain‐source current model and gate capacitance models are proposed to improve the accuracy of traditional Angelov model. A one stage resistor‐capacitor network is attached in the current model to characterize self‐heating effect. Therefore, a scalable large‐signal model based on a hybrid‐scaling rule is presented for the first time. Compared with traditional linear scalable model, the proposed model has a good prediction for multi‐bias S‐parameters and direct current (DC) I‐V curves of different size devices, and can also significantly improve the fitting degree of S22 parameter at high frequency. Moreover, the proposed scalable model shows a good prediction of large‐signal characteristics for large size GaN HEMT devices.

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A Small-Signal Model Extraction and Optimization Method for AlGaN/GaN HEMT Up to 110 GHz

Cited by 7 publications

References 6 publications

Analytical model of non-uniform charge distribution within the gated region of GaN HEMTs

Analytical model of non-uniform charge distribution within the gated region of GaN HEMTs

A New GaN HEMT Small-Signal Model Considering Source via Effects for 5G Millimeter-Wave Power Amplifier Design

A scalable large‐signal model with self‐heating effect based on a hybrid‐scaling rule for GaN high‐electron‐mobility transistors

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