Although SiC MOSFET has significant improvements on switching performance compared with traditional Si power devices, the dynamic loss of the converter rises with the increase of the switching frequency of the converter. To further improve the efficiency of SiC inverter and power density, Zero-Voltage-Switching (ZVS) is investigated. A SiC full-bridge inverter with ZVS-switching is presented. The efficiency of SiC MOSFET ZVS full-bridge inverter is compared with that of hard switching SiC inverter at different switching frequency. Finally it is shown that the ZVS-Switching inverter is preferred in high switching frequency.