A spectrally tunable all-graphene-based flexible field-effect light-emitting device

Wang, Xiaomu; Tian, He; Mohammad, Mohammad Ali; Li, Cheng; Wu, Can; Yang, Yi; Ren, Tian‐Ling

doi:10.1038/ncomms8767

Cited by 119 publications

(95 citation statements)

References 31 publications

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“…Overall, graphene may be more promising for applications in photodetectors, biosensors and chemical sensors because graphene channel currents are very sensitive to changes in potential and charge density. [93,113,[190][191][192][193] …”

Section: Graphene Channelmentioning

confidence: 99%

All‐Carbon Thin‐Film Transistors as a Step Towards Flexible and Transparent Electronics

Sun

Liu

Ren

et al. 2016

Adv Elect Materials

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silicon wafer, TFTs can be fabricated on various types of rigid or flexible substrates. [1] TFTs fabricated on glass are primarily used for driving circuits in the liquid-crystal displays of televisions, computer monitors, and mobile phones, etc. Well-established TFT technologies based on amorphous silicon and polycrystalline silicon are well-suited for large-area, highresolution panels, e.g., six pieces of 65-and 75-inch TFT arrays can be fabricated on a 10.5th generation glass substrate. [2] However, TFTs based on these silicon-based semiconductors still face challenges in flexible and transparent applications, which would allow circuit integration on curved and non-rigid surfaces and in multi-layer packaging, e.g., head-up displays on windshields, informational displays on eyeglasses and transparent electronic skin in wearable electronics. [3] In terms of the materials used to construct flexible and transparent devices, not only the transistor channel but also the dielectric layers and metallic interconnects should have excellent flexibility and transparency. [4] The following factors play critical roles in the selection of channel materials: carrier mobility, temperature of material preparation, flexibility, large area availability, cost and stability. Carrier mobility is an important parameter to characterize the drift velocity of electrons or holes in a semiconductor under an applied electric field. [5] A high mobility corresponds to a high operating speed of the TFTs and their circuits. The only advantage of low-temperature polycrystalline silicon is its relatively high mobility. [6] Amorphous oxide semiconductors, including indium gallium zinc oxide, have a modest mobility and are costly due to the use of noble metal elements. [7] Hydrogenterminated amorphous silicon has modest properties in carrier mobility, large-area and flexibility, [1] and organic semiconductors are better suited for flexible and transparent TFTs except for their shortcomings of low mobility and poor environmental stability. [8] On the other hand, normal metal electrodes, such as gold, silver, aluminum and copper, cannot be used to form transparent electrodes due to their poor light transmittance. Both transparent indium tin oxide (ITO) electrodes and opaque metal electrodes suffer from flexibility constraints and can usually tolerate strains of less than 2%. [9][10][11] Therefore, the discovery of new types of robust channel and electrode materials is essential to achieve transparent, flexible, and even stretchable electronics. [12] Carbon nanomaterials, such as carbon nanotubes (CNTs) and graphene, have attracted great attention for potential use in flexible and transparent electronics since their discovery in the last two decades, [13,14] owing to their excellent properties Carbon nanotubes and graphene have attracted great attention for potential applications in flexible and transparent electronics, owing to their exceptional properties including very high electrical conductivity, optical transmittance, mechanical strength and f...

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Section: Graphene Channelmentioning

confidence: 99%

All‐Carbon Thin‐Film Transistors as a Step Towards Flexible and Transparent Electronics

Sun

Liu

Ren

et al. 2016

Adv Elect Materials

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“…Photoexcitation measurements reveal efficient excited carrier relaxation within a few hundred femtoseconds1112 yet probe the lattice on the length scale of the optical wavelength. Moreover, large electric fields1314 and collisions with energetic particles1516171819202122232425262728, which allow for tuning the properties of graphene, further modify the response of the material. A reliable tool to locally probe the timescales of the electronic response of pristine graphene to large fields is thus urgently needed.…”

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confidence: 99%

Ultrafast electronic response of graphene to a strong and localized electric field

et al. 2016

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The way conduction electrons respond to ultrafast external perturbations in low dimensional materials is at the core of the design of future devices for (opto)electronics, photodetection and spintronics. Highly charged ions provide a tool for probing the electronic response of solids to extremely strong electric fields localized down to nanometre-sized areas. With ion transmission times in the order of femtoseconds, we can directly probe the local electronic dynamics of an ultrathin foil on this timescale. Here we report on the ability of freestanding single layer graphene to provide tens of electrons for charge neutralization of a slow highly charged ion within a few femtoseconds. With values higher than 1012 A cm−2, the resulting local current density in graphene exceeds previously measured breakdown currents by three orders of magnitude. Surprisingly, the passing ion does not tear nanometre-sized holes into the single layer graphene. We use time-dependent density functional theory to gain insight into the multielectron dynamics.

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“…As a novel type of metal-free fluorescent materials, graphene quantum dots (GQDs) have gained remarkable interest, because their unique broadband and tunable photoemission properties are controlled by the quantum confinement effect and edge states [1][2][3]. In addition, GQDs have other advantages, such as good water solubility, low toxicity, and biocompatibility.…”

Section: Introductionmentioning

confidence: 99%

Ultrafast ammonia-driven, microwave-assisted synthesis of nitrogen-doped graphene quantum dots and their optical properties

et al. 2016

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Abstract:For the first time, a facile, ultrafast, ammoniadriven microwave-assisted synthesis of high-quality nitrogen-doped graphene quantum dots (NGQDs) at room temperature and atmospheric pressure is presented. This one-step method is very cheap, environment friendly, and suitable for large-scale production. The as-synthesized NGQDs consisting of one to three graphene monolayers exhibit highly crystalline quality with an average size of 5.3 nm. A new fluorescence (FL) emission peak at 390 nm is observed, which might be attributed to the doped nitrogen atoms into the GQDs. An interesting red-shift is observed by comparing the FL excitation spectra to the UV-visible absorption spectra. Based on the optical properties, the detailed Jablonski diagram representing the energy level structure of NGQDs is derived.

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A spectrally tunable all-graphene-based flexible field-effect light-emitting device

Cited by 119 publications

References 31 publications

All‐Carbon Thin‐Film Transistors as a Step Towards Flexible and Transparent Electronics

All‐Carbon Thin‐Film Transistors as a Step Towards Flexible and Transparent Electronics

Ultrafast electronic response of graphene to a strong and localized electric field

Ultrafast ammonia-driven, microwave-assisted synthesis of nitrogen-doped graphene quantum dots and their optical properties

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