A spin–orbit torque device for sensing three-dimensional magnetic fields

Li, Ruofan; Zhang, Shuai; Luo, Shijiang; Guo, Zhe; Xu, Yan; Ouyang, Jun; Song, Min; Zou, Qiming; Xi, Li; Yang, Xiaofei; Hong, Jeongmin; You, Long

doi:10.1038/s41928-021-00542-8

Cited by 48 publications

(31 citation statements)

References 49 publications

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“…The magnetization can be switched by an in-plane current I x with the assistance of a collinear magnetic field H x via SOT (Section S1, Supporting Information). Moreover, as found in our previous work, [23] the coercive field of the AHE loop (AHR R H vs H x ) decreases with I x increases. Here, at I x = 30 mA, R H varies linearly with applied H x within the range of −12 to +12 Oe (orange points in Figure 1b).…”

Section: In-memory Electrical Current Sensing Unitsupporting

confidence: 88%

In‐Memory Mathematical Operations with Spin‐Orbit Torque Devices

Song

Guo

et al. 2022

Advanced Science

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Analogue arithmetic operations are the most fundamental mathematical operations used in image and signal processing as well as artificial intelligence (AI). In-memory computing offers high performance and energy-efficient computing paradigm. To date, in-memory analogue arithmetic operation with emerging nonvolatile devices were usually implemented using discrete components, which limits the scalability and blocks large scale integration. Here, we experimentally demonstrate a prototypical implementation of in-memory analogue arithmetic operations (summation, subtraction and multiplication), based on in-memory electrical current sensing units using spinorbit torque (SOT) devices. The proposed analogue arithmetic operation structures are smaller than the state-of-the-art CMOS counterparts by several orders of magnitude.Moreover, data to be processed and computing results can be locally stored, or the analogue computing can be done in the nonvolatile SOT devices, which were exploited to experimentally implement image edge detection and signal amplitude modulation with simple structure. Furthermore, we constructed an artificial neural network (ANN) with SOT devices based synapses to realize pattern recognition with high accuracy of ~95%.

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Section: In-memory Electrical Current Sensing Unitsupporting

confidence: 88%

In‐Memory Mathematical Operations with Spin‐Orbit Torque Devices

Song

Guo

et al. 2022

Advanced Science

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“…Domain walls (DWs) in ferroic materials have attracted intensive interest over the past decades due to their physical phenomena and potential for applications in nanoelectronics 1 , 2 and spintronics 3 – 5 . Of particular interest are the designs of racetrack memory 6 , 7 and DW logic 8 , 9 based on moving magnetic DWs driven by a current or a magnetic field.…”

Section: Introductionmentioning

confidence: 99%

Ferroelectric domain-wall logic units

Wang

Huang

et al. 2022

Nat Commun

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The electronic conductivities of ferroelectric domain walls have been extensively explored over the past decade for potential nanoelectronic applications. However, the realization of logic devices based on ferroelectric domain walls requires reliable and flexible control of the domain-wall configuration and conduction path. Here, we demonstrate electric-field-controlled stable and repeatable on-and-off switching of conductive domain walls within topologically confined vertex domains naturally formed in self-assembled ferroelectric nano-islands. Using a combination of piezoresponse force microscopy, conductive atomic force microscopy, and phase-field simulations, we show that on-off switching is accomplished through reversible transformations between charged and neutral domain walls via electric-field-controlled domain-wall reconfiguration. By analogy to logic processing, we propose programmable logic gates (such as NOT, OR, AND and their derivatives) and logic circuits (such as fan-out) based on reconfigurable conductive domain walls. Our work might provide a potentially viable platform for programmable all-electric logic based on a ferroelectric domain-wall network with low energy consumption.

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“…Spin–orbit torque (SOT)-driven magnetic switching has attracted a lot of attention because of its significant application potential in nonvolatile, low-power, high-speed, and high-density magnetic random access memories and emerging spin logic devices. − The bilayer structure consisted of strong spin–orbit coupling (SOC) materials (e.g., topological insulator, two-dimensional electron gas, and Weyl semimetal and heavy metal) and ferromagnetic (FM) materials is widely accepted as the basic strategy of SOT switching. − However, the thickness of the FM layer in the bilayer structure is subjected to the non-local spin injection and spin coherence length, and the critical current density ( J c ) is enlarged with the increasing thickness of the FM layer, that is, the interfacial nature of the SOT effect. This peculiarity results in incompatibility between low J c and a thick FM layer for high thermal stability, which hinders the application of SOT-based devices in low-power and high-density memory and computation systems. − …”

Section: Introductionmentioning

confidence: 99%

Field-Free Magnetization Switching Induced by Bulk Spin–Orbit Torque in a (111)-Oriented CoPt Single Layer with In-Plane Remanent Magnetization

Zhang

Shen

et al. 2022

ACS Appl. Electron. Mater.

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Spin–orbit torque (SOT)-induced perpendicular magnetization switching is one of the key solutions for the next generation of magnetic memory and spin logic applications. Recently, the bulk SOT effect in a single magnetic layer with a vertical composition gradient has attracted a lot of attention because it can break through the interfacial nature of the SOT effect in a traditional bilayer structure. However, the dependency of the external in-plane magnetic field or the additional pinning layer for deterministic switching hinders the further application of this technology. Here, for the first time, we implement field-free magnetization switching induced by bulk SOT in a single (111)-oriented CoPt magnetic layer with in-plane remanent magnetization. The initialized longitudinal in-plane remanent magnetization can substitute the external magnetic field to break the inversion symmetry and realize continuous field-free perpendicular magnetization switching. Furthermore, the in-plane remanent magnetization can be manipulated by the SOT effective field induced by lateral current pulses, leading to a tunable switching chirality. A multi-domain micromagnetic model is established to describe in depth the experimental observations and clarify the relationship between switching amplitude and easy magnetization cone angle. Our work provides an alternative solution to realize field-free perpendicular magnetization switching in a single magnetic layer, which can promote the development of emerging high-density and low-power SOT-based devices.

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A spin–orbit torque device for sensing three-dimensional magnetic fields

Cited by 48 publications

References 49 publications

In‐Memory Mathematical Operations with Spin‐Orbit Torque Devices

In‐Memory Mathematical Operations with Spin‐Orbit Torque Devices

Ferroelectric domain-wall logic units

Field-Free Magnetization Switching Induced by Bulk Spin–Orbit Torque in a (111)-Oriented CoPt Single Layer with In-Plane Remanent Magnetization

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