Ferroelectric domain-wall logic units

Wang, Jing; Ma, Jing; Huang, Houbing; Ma, Ji; Jafri, Hasnain Mehdi; Fan, Yuanyuan; Yang, Huayu; Wang, Yue; Chen, Mingfeng; Liu, Di; Zhang, Jinxing; Lin, Yuan‐Hua; Chen, Lei; Yi, Di; Chen, Nan

doi:10.1038/s41467-022-30983-4

Cited by 58 publications

(30 citation statements)

References 42 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Another proposal for programmable logic gates and circuitry was based on controlled writing and the erasure of walls in topologically confined vertex domains in self-assembled ferroelectric nanoislands [51]. A three-terminal, fast, field-effect junctionless transistor [101] and diode operation [111] were also realized using electrically reconfigurable stable domain walls in ion-sliced LiNbO 3 films bonded to silicon (figures 2(d) and (e)).…”

Section: Multi-level Solid-state Wall Devicesmentioning

confidence: 99%

Neuromorphic functionality of ferroelectric domain walls

Sharma

Seidel

2023

Neuromorph. Comput. Eng.

View full text Add to dashboard Cite

Mimicking and replicating the function of biological synapses with engineered materials is a challenge for the 21st century. The field of neuromorphic computing has recently seen significant developments, and new concepts are being explored. One of these approaches uses topological defects, such as domain walls in ferroic materials, especially ferroelectrics, that can naturally be addressed by electric fields to alter and tailor their intrinsic or extrinsic properties and functionality. Here, we review concepts of neuromorphic functionality found in ferroelectric domain walls and give a perspective on future developments and applications in low-energy, agile, brain-inspired electronics and computing.

show abstract

Section: Multi-level Solid-state Wall Devicesmentioning

confidence: 99%

Neuromorphic functionality of ferroelectric domain walls

Sharma

Seidel

2023

Neuromorph. Comput. Eng.

View full text Add to dashboard Cite

show abstract

“…Unfortunately, the wall currents are still insufficient to drive high-power nanodevices and fast memory circuits Figure shows the statistics of a typical linear wall current density of 2 × 10 –4 – 57 μA/μm among Pb(Zr,Ti)O 3 , , BaTiO 3 , , BiFeO 3 , ,,,− ErMnO 3 , ,, and LiNbO 3 ,,,− ferroelectric materials. The values are correlated with the inclined wall angle (0° ≤ ±θ < 90°) of two different domains, and the resulting DWs can be divided into neutral (θ = 0°; NDW) and charged DWs (θ ≠ 0°; CDWs).…”

Section: Introductionmentioning

confidence: 99%

High-Power LiNbO₃ Domain-Wall Nanodevices

Sun

Zhang

et al. 2023

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

Wide band gap semiconductors keep on pushing the limits of power electronic devices to higher switching speeds and higher operating temperatures, including diodes and transistors on low-cost Si substrates. Alternatively, erasable conducting walls created within ferroelectric single-crystal films integrated on the Si platform have emerged as a promising gateway to adaptive nanoelectronics in sufficient output power, where the repetitive creation of highly charged domain walls (DWs) is particularly important to increase the wall current density. Here, we observe large conduction of the head-to-head DW at an optimized inclination angle of 15° within a LiNbO3 single crystal that is 3–4 orders of magnitude higher than that of the tail-to-tail DW. The wall conduction is diode-like with a linear current density of higher than 1 mA/μm and an on/off ratio of larger than 106 under the application of a repetitive switching voltage pulse in time less than 10 ns and an endurance number of higher than 105. The high-power diodes can not only perform direct data processing in high-density nonvolatile DW memories in fast operation speeds and low-energy consumption but also function as sensors in compact electromechanical systems, selectors in phase-change memory and resistive random-access memory, and half-wave/full-wave rectifiers in modern nanocircuits in dimensions approaching the thickness of the depletion layer below which the tradition p–n junction malfunctions.

show abstract

“…There are many forms of ferroelectric storage, especially for ferroelectric single‐crystalline thin films with excellent performance. For example, traditionally changing the polarization state of the domain structure on single‐crystalline Pb(Zr, Ti)O 3 films, [ 6 ] moving ferroelectric domain walls of single‐crystalline BaTiO 3 by varying the polarization angle of a coherent light source, [ 7 ] controlling conductive domain walls in self‐assembled BiFeO 3 nanoisland topological domain structures by electric fields, [ 4 ] and using multiferroic tunneling layer and ferromagnetic electrodes to achieve multi‐state storage. [ 5 ] With the advent of the Internet of Things era, portable electronic devices, big data, cloud storage, and human‐computer interaction are booming, and the generation of various data is increasing exponentially.…”

Section: Introductionmentioning

confidence: 99%

Self‐Rolling‐Up Enabled Ultrahigh‐Density Information Storage in Freestanding Single‐Crystalline Ferroic Oxide Films

Guo

Peng

Qiu

et al. 2023

Adv Funct Materials

View full text Add to dashboard Cite

Ferroelectric memory is one of the most attractive emerging nonvolatile memory. Conventional methods to increase storage density in ferroelectrics include reducing the storage bit size or fabricating 3D stacks. However, the former will face a physical limit finally, and the integration of single‐crystalline ferroelectric oxide following the latter still remains a great challenge. Here, a new method is introduced to construct a scroll‐like 3D memory structure by self‐rolling‐up single‐crystalline ferroelectric oxides. PbZr0.3Ti0.7O3 single‐crystalline thin film is chosen as a prototype and epitaxially grown on another oxide stressor layer with a few lattice‐mismatch. Releasing such “Pb(Zr, Ti)O3/stressor” bilayered structure from the substrate induces self‐rolling‐up due to the internal stress from the lattice‐mismatch. High‐density information can be written in the form of switched ferroelectric domains on those flat “Pb(Zr, Ti)O3/stressor” membranes via piezoelectric force microscopy. In self‐rolling‐up membranes, information density can be experimentally enhanced up to 45 times. Theoretically, the freestanding “Pb(Zr, Ti)O3/stressor” membranes have a strongly driven force to self‐rolling‐up, and the area ratio can enhance 100–450 times, corresponding to an ultra‐high density information storage of 102 Tbit In−2. This study provides a new and general method to develop compact, high‐density, and 3D memories from oxide materials.

show abstract

Ferroelectric domain-wall logic units

Cited by 58 publications

References 42 publications

Neuromorphic functionality of ferroelectric domain walls

Neuromorphic functionality of ferroelectric domain walls

High-Power LiNbO₃ Domain-Wall Nanodevices

Self‐Rolling‐Up Enabled Ultrahigh‐Density Information Storage in Freestanding Single‐Crystalline Ferroic Oxide Films

Contact Info

Product

Resources

About

Ferroelectric domain-wall logic units

Cited by 58 publications

References 42 publications

Neuromorphic functionality of ferroelectric domain walls

Neuromorphic functionality of ferroelectric domain walls

High-Power LiNbO3 Domain-Wall Nanodevices

Self‐Rolling‐Up Enabled Ultrahigh‐Density Information Storage in Freestanding Single‐Crystalline Ferroic Oxide Films

Contact Info

Product

Resources

About

High-Power LiNbO₃ Domain-Wall Nanodevices