A spin-valve-like magnetoresistance of an antiferromagnet-based tunnel junction

Park, B. G.; Wunderlich, J.; Martí, X.; Holý, V.; Kurosaki, Yosuke; Yamada, Masaki; Yamamoto, Hirotsugu; Nishide, Akemi; Hayakawa, Jun; Takahashi, Hirokazu; Shick, A. B.; Jungwirth, T.

doi:10.1038/nmat2983

Cited by 553 publications

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“…The exchange bias and broadening of the Fe hysteresis loop induced by CuMnAs provides not only additional evidence for the high-temperature AFM ordering in the tetragonal CuMnAs epilayers, but also clearly demonstrates the potential of this new material for AFM-based spintronic functionalization. The same type of AFM/FM exchange-coupling phenomena was utilized in the demonstration of the first AFMtunnelling anisotropic magnetoresistance devices 1,2,6 .…”

Section: Discussionmentioning

confidence: 99%

“…L arge and bistable magnetoresistance signals have been observed in tunnelling devices with an antiferromagnetic (AFM) IrMn layer on one side and a non-magnetic metal on the other side of the tunnel barrier 1,2 . The work has experimentally demonstrated the feasibility of a spintronic concept [3][4][5] in which the electronic device characteristics are governed by the staggered magnetization axis in an AFM.…”

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confidence: 99%

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Tetragonal phase of epitaxial room-temperature antiferromagnet CuMnAs

et al. 2013

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Recent studies have demonstrated the potential of antiferromagnets as the active component in spintronic devices. This is in contrast to their current passive role as pinning layers in hard disk read heads and magnetic memories. Here we report the epitaxial growth of a new hightemperature antiferromagnetic material, tetragonal CuMnAs, which exhibits excellent crystal quality, chemical order and compatibility with existing semiconductor technologies. We demonstrate its growth on the III-V semiconductors GaAs and GaP, and show that the structure is also lattice matched to Si. Neutron diffraction shows collinear antiferromagnetic order with a high Néel temperature. Combined with our demonstration of room-temperatureexchange coupling in a CuMnAs/Fe bilayer, we conclude that tetragonal CuMnAs films are suitable candidate materials for antiferromagnetic spintronics.

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confidence: 99%

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Tetragonal phase of epitaxial room-temperature antiferromagnet CuMnAs

et al. 2013

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“…As an antiparallel magnetic structure with a low magnetic susceptibility, AFMs have negligible net magnetization 13,14 . Consequently, in a AFM/MTI heterostructure, the full spectrum of topological surface states may be easily modified through the strong exchange field of the AFM without invoking significant spin-dependent scattering on magnetic ions 15,16 .…”

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Tailoring exchange couplings in magnetic topological-insulator/antiferromagnet heterostructures

et al. 2016

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“…One of the milestones of AFM spintronics is finding an efficient method for monitoring the magneticorder parameter in AFM materials. Anisotropic magnetoresistance (AMR) [6] and tunneling AMR [7,8] observed in AFMs are among very promising candidates for this purpose. The canted AFM iridate Sr 2 IrO 4 (see Fig.…”

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Anisotropic Magnetoresistance in AntiferromagneticSr2IrO4

et al. 2014

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We report point-contact measurements of anisotropic magnetoresistance (AMR) in a single crystal of antiferromagnetic Mott insulator Sr 2 IrO 4 . The point-contact technique is used here as a local probe of magnetotransport properties on the nanoscale. The measurements at liquid nitrogen temperature reveal negative magnetoresistances (up to 28%) for modest magnetic fields (250 mT) applied within the IrO 2 a-b plane and electric currents flowing perpendicular to the plane. The angular dependence of magnetoresistance shows a crossover from fourfold to twofold symmetry in response to an increasing magnetic field with angular variations in resistance from 1% to 14%. We tentatively attribute the fourfold symmetry to the crystalline component of AMR and the field-induced transition to the effects of applied field on the canting of antiferromagnetic-coupled moments in Sr 2 IrO 4 . The observed AMR is very large compared to the crystalline AMRs in 3d transition metal alloys or oxides (0.1%-0.5%) and can be associated with the large spin-orbit interactions in this 5d oxide while the transition provides evidence of correlations between electronic transport, magnetic order, and orbital states. The finding of this work opens an entirely new avenue to not only gain a new insight into physics associated with spin-orbit coupling but also to better harness the power of spintronics in a more technically favorable fashion. [13] behaviors, which makes them an attractive playground for studying physics driven by spin-orbit interactions. As AMR is known to be closely associated with spin-orbit interaction, the strong spin-orbit interaction in this 5d transition metal oxide may favor stronger AMR compared to 3d transition metal alloys and oxides. The recent magnetotransport studies in Sr 2 IrO 4 single crystals [14,15] and thin films [6] revealed largely unexplored correlations between electronic transport, magnetic order, and orbital states.Here, we present the first observation of the pointcontact AMR in single crystals of the AFM Mott insulator Sr 2 IrO 4 [14-16], which can potentially be used to sense the AFM order parameter in spintronic nanodevices. The pointcontact technique allows us to probe very small volumes and, therefore, measures electronic transport on a microscopic scale. Point-contact measurements with single crystals of Sr 2 IrO 4 are intended to examine whether the additional local resistance associated with a small contact area between a sharpened Cu tip and the antiferromagnet shows a magnetoresistance (MR) like that seen in bulk crystals. The measurements at liquid nitrogen temperature reveal large MRs (up to 28%) for modest magnetic fields (250 mT) applied within the IrO 2 a-b plane. The angular dependence of MR reveals an AMR with an intriguing transition from fourfold to twofold symmetry in response to

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A spin-valve-like magnetoresistance of an antiferromagnet-based tunnel junction

Cited by 553 publications

References 17 publications

Tetragonal phase of epitaxial room-temperature antiferromagnet CuMnAs

Tetragonal phase of epitaxial room-temperature antiferromagnet CuMnAs

Tailoring exchange couplings in magnetic topological-insulator/antiferromagnet heterostructures

Anisotropic Magnetoresistance in AntiferromagneticSr2IrO4

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