A stochastic resonator in a layered semiconductor device

Abstract

In this paper, we propose a device that picks up a periodic but weak signal by amplifying it assisted by the existing background noise. The device consists of a doped layered semiconductor with three gates that generate a one-dimensional double-well potential along the semiconductor. A laser coolant is to be shined on the other side of the central gate perpendicular to the one-dimensional layer causing triple-well potential. A weak tunable oscillator imposed parallel to the layer that rocks the potential landscape can pick up an incoming signal of interest as a result of resonance. To justify the model, we carried out analytic calculation as well as Monte Carlo simulation. The two approaches agree reasonably well for all the different parameter values we used.

Thermally activated escape rate and dynamics of a particle under a harmonic potential

“…The external confining double well potential is expressed as [21], eV nm 4 respectively and x is the position of impurities in the unit of nm. As a result, the impurities are resides around the potential minima as long as the background temperature is homogeneous.…”

“…As a result, the impurities are resides around the potential minima as long as the background temperature is homogeneous. When a system subjected into a nonhomogeneous temperature [21],…”

“…In the field of semiconductor physics has received a considerable attention due to the problem of how to adjust the conductivity of the semiconductor by adding the impurities into their crystal lattice and manipulating the level of conductivity on the type and amount of impurities. Recent studies showed that the conductivity of the semiconductor is controlled by also changing the strength of the background temperature along the semiconductor layer [15][16][17][18][19][20][21][22][23][24][25]. The background temperature in a semiconductor affects the concentration and diffusivity of impurities which are responsible for conduction.…”

“…The background temperature in a semiconductor affects the concentration and diffusivity of impurities which are responsible for conduction. Researchers clearly described that the nonlinear potential produced by the movable split gate along the semiconductor layer [26] and neglecting the interaction between the dopants at low impurity density, the diffusion of impurities can be controlled not only by varying the external potential but also by altering the intensity of the temperature and trap depth of the impurities in the semiconductor layer [18][19][20][21][22][23]. They proposed the way of eradicating the unwanted impurities from the certain region of the semiconductor by varying the different model parameters and studying the stochastic resonance when the time varying signal applied to the semiconductor, that may induce the system into stochastic resonance (SR).…”

“…In Refs. [20], [21], they have designed a semiconductor layer subjected to an external quartic and double well potential under a uniform trap depth potential, respectively. By applying a non-homogeneous cold temperature in addition to a background uniform temperature, the system undergoes a phase transition to effective bistable and tristable potential, respectively.…”