A Straightforward, New Method for the Synthesis of Nanocrystalline GaAs and GaP

Kher, Shreyas S.; Wells, Richard L.

doi:10.1021/cm00047a027

Cited by 118 publications

(83 citation statements)

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“…A relatively low-temperature method involving similar reactions in organic solvents has been reported for the preparation of GaP and GaAs nanoparticles, using gallium (III) halides and (Na/K) 3 E (E ) P, As). 111 This method avoids the use of hazardous phosphines or arsines. Nanocrystallites of InAs and InP were also synthesized 112 from the reaction of InX 3 (X ) Cl, Br, I) with As(SiMe 3 ) 3 or P(SiMe 3 ) 3 , respectively.…”

Section: Preparative Methods For the Synthesis Of Nanoparticlesmentioning

confidence: 99%

Nanocrystalline Semiconductors: Synthesis, Properties, and Perspectives

2001

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The synthesis and study of so-called "nanoparticles", particles with diameters in the range of 1-20 nm, has become a major interdisciplinary area of research over the past 10 years. Semiconductor nanoparticles promise to play a major role in several new technologies. The intense interest in this area derives from their unique chemical and electronic properties, which gives rise to their potential use in the fields of nonlinear optics, luminescence, electronics, catalysis, solar energy conversion, and optoelectronics, as well as other areas. The small dimensions of these particles result in different physical properties from those observed in the corresponding macrocrystalline, "bulk", material. As particle sizes become smaller, the ratio of surface atoms to those in the interior increase, leading to the surface properties playing an important role in the properties of the material. Semiconductor nanoparticles also exhibit a change in their electronic properties relative to that of the bulk material; as the size of the solid becomes smaller, the band gap becomes larger. This allows chemists and material scientists the unique opportunity to change the electronic and chemical properties of a material simply by controlling its particle size. Research has already led to the fabrication of a number of devices. This review aims to highlight recent advances in the synthesis of compound semiconductor nanoparticle materials and their potential use in areas such as catalysis and electronic device fabrication.

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Section: Preparative Methods For the Synthesis Of Nanoparticlesmentioning

confidence: 99%

Nanocrystalline Semiconductors: Synthesis, Properties, and Perspectives

2001

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“…Up to date, already synthesized have been the following semiconductor inks with: Si [61,62], ZnS [63,64], ZnO [65,66], ZnSe [67], Se [68,69], CdS [70,71], CdSe [72,73], CdTe [74,75], GaAs [76,77], GaSb [78]. The Ge ink was not synthesized but Ge nanoparticles have been already synthesized [79].…”

Section: Semiconductor Inksmentioning

confidence: 99%

Untitled

2013

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. In this work, features of solar cells of lateral type were analyzed. The authors offered a design of a monolithic compact solar module with cells electrically connected in series and with a dispersion element (holographic grating). Simulation of a multistage converter was carried out. It has been shown that with increasing the number of cells n the maximum limited efficiency  increases. Its maximum values up to  ≈ 53.6% are reached for n = 15 (in the case of perfectly matched semiconductors and conditions AM0). With further increase of n , the efficiency decreases. For a set of concrete semiconductors  ≈ 45% the maximum efficiency for AM0 conditions may be achieved, when the number of cells equals 4. It has been shown that the calculation results agree with experimental data. The possibility of technical implementation of solar cells with using inkjet printers was investigated, too. Briefly discussed have been the properties of these printers, as well as metal, semiconductor and dielectric inks.

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“…Various methods have been demonstrated for the synthesis of III±V group materials with nanometer-sized dimensions. Alivisatos et al have used (Me 3 Si) 3 E to prepared ME: (Me 3 Si) 3 E + MX 3 ® ME (M = Ga, In; X = Cl, Br, I; E = P, As, Sb). [2] Wells and co-workers have obtained nanocrystalline III±V group semiconductors, such as InP, GaP, GaAs, and InAs, with sizes in the range of 4±35 nm by the reaction (Na,K) 3 E + MX 3 ® ME + 3(Na,K)X.…”

Section: Introductionmentioning

confidence: 99%

“…[3±5] This reaction is similar to the one used by Alivisatos, except that (Me 3 Si) 3 E was replaced by (Na,K) 3 E. Precursors that already have a M±E (M = Ga, In; E = N, P, As) bond can be pyrolyzed to produce ME at relatively low temperatures. The products could be post-treated at 500 C or higher temperatures for crystallization.…”

Section: Introductionmentioning

confidence: 99%

Solvothermal Synthesis of Nanocrystalline III-V Semiconductors

Qian¹

1999

Adv. Mater.

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A simple, convenient approach to III–V semiconducting nanocrystallitesis described—the solvothermal method. Similar to the hydrothermal method, except that organic solvents are used instead of water, this method is reported to effectively prevent oxidation of the products. Materials such as 12 nm InP, 32 nm GaN, and 12 nm InAs can be prepared via this method, resulting in crystalline materials that do not need post‐treatment at high temperatures. In addition, organometallic precursors are not required.

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A Straightforward, New Method for the Synthesis of Nanocrystalline GaAs and GaP

Cited by 118 publications

References 0 publications

Nanocrystalline Semiconductors: Synthesis, Properties, and Perspectives

Nanocrystalline Semiconductors: Synthesis, Properties, and Perspectives

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Solvothermal Synthesis of Nanocrystalline III-V Semiconductors

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