A Strategic Review of Novel Sample Preparation Method for Dopant Profiling of Advanced Node FinFET Devices with Scanning Capacitance Microscopy

Abstract

Sample preparation is a critical step for dopant profiling of FinFET devices, especially when targeting individual fins. This article describes a sample-preparation technique based on low-energy, shallow-angle ion milling and shows how it minimizes surface amorphization and improves scanning capacitance microscopy (SCM) signals representative of local active dopant concentration.