A stress-based effective film technique for wafer warpage prediction of arbitrarily patterned films

Ostrowicki, Gregory T.; Gurrum, Siva P.

doi:10.1109/ectc.2014.6897380

Cited by 7 publications

(2 citation statements)

References 6 publications

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“…Even though the other methods can make the stress changes different between the X and Y directions, they each have their own shortcomings. First, the method of film deposition on the backside of a wafer can optimize the saddle-shape warpage via deposition of different thicknesses along the X and Y directions, but it is not friendly to wafer transfer by an electrostatic chuck due to the uneven surface [12]. Second, ion implantation relies on differential implantation along the two directions [13].…”

Section: Introductionmentioning

confidence: 99%

An effective solution to optimize the saddle-shape warpage in 3D IC applications by patterning laser treatment

Fan¹,

Xia²,

Xie³

et al. 2023

Semicond. Sci. Technol.

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The asymmetric saddle-shape warpage is one of the hardest limitations on the development of three-dimensional integrated circuits (3D ICs) as the vertical integration increases. To improve the product yield, an effective method for saddle-shape warpage reduction in 3D IC production by backside patterning laser annealing treatment with a multilayer structure is investigated in this work. The reduction of saddle–shaped warpage by patterning laser treatment is the first time in 3D NAND array wafer application and through simulations and experiments, the laser annealing pattern is determined. In addition, the materials of the multilayer structure are selected as amorphous Al2O3 and TiN according to experiments and theoretical analysis. As a result, a conformal 47.8 µm optimization of the saddle-shape warpage is successfully reached in a control wafer test by patterning laser annealing treatment.

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Section: Introductionmentioning

confidence: 99%

An effective solution to optimize the saddle-shape warpage in 3D IC applications by patterning laser treatment

Fan¹,

Xia²,

Xie³

et al. 2023

Semicond. Sci. Technol.

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“…Indeed, the numerical and stable solution usually is not the physical one, unless a small perturbative displacement which will lead to the curl shape [18] is applied. Moreover, simulations have been also reported for the case of a flat and patterned substrate [21] However, and at the best of our knowledge, no extensive essays have been reported for the case of the taiko wafer, in the general case. It is hence unknown how the change of the warpage occurs for these kinds of wafers.…”

Section: Introductionmentioning

confidence: 99%

<strong>Extension of the Stoney Equation for a Taiko Wafer (Si and SiC)</strong>

Landi¹,

Vinciguerra²

2020

Preprint

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An extension of the Stoney formula for the case of a back side metallized 8” silicon taiko wafer has been developed, in the elastic regime, within the frame of the theory of elasticity. A good correlation between the calculated warpage, determined by the stress released by a given back side metallization (BSM), and the corresponding experimental warpages of the same thick metal layers deposited on an 8” silicon taiko wafer provides evidences of the correctness of the developed theory. This development suggests the possibility to extend this approach to the case of 8” taiko wafers based on a wide band gap semiconductor such as silicon carbide (SiC).

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A new processing technique for fabrication of ultra-thin wafer

Zeng

Zhang

Zhou

et al. 2018

Int J Adv Manuf Technol

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A stress-based effective film technique for wafer warpage prediction of arbitrarily patterned films

Cited by 7 publications

References 6 publications

An effective solution to optimize the saddle-shape warpage in 3D IC applications by patterning laser treatment

An effective solution to optimize the saddle-shape warpage in 3D IC applications by patterning laser treatment

<strong>Extension of the Stoney Equation for a Taiko Wafer (Si and SiC)</strong>

A new processing technique for fabrication of ultra-thin wafer

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