A Study of 6H-Seeded 4H-SiC Bulk Growth by PVT

Tupitsyn, Eugene Y.; Arjunan, Arul Chakkaravarthi; Bondokov, Robert T.; Kennedy, Robert M.; Sudarshan, Tangali S.

doi:10.4028/www.scientific.net/msf.483-485.21

Cited by 11 publications

(8 citation statements)

References 8 publications

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“…Silicon carbide is one of the most attractive and promising wide band-gap semiconductor materials with high breakdown voltage, high thermal conductivity, and high electron mobility [1][2][3]. Commercial available SiC-power-devices of MOSFETs and SBDs are recently fabricated with SiC epitaxial layer grown on n-type 4H-SiC substrates with 4, 6-inch in diameter.…”

Section: Introductionmentioning

confidence: 99%

Modified Hot-Zone Design for Large Diameter 4H-SiC Single Crystal Growth

Choi¹,

Kim²,

Jang³

et al. 2019

MSF

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6-inch 4H-SiC single crystal was grown with modified hot-zone design for large diameter crystal. The simulation data confirmed reduced temperature gradient between center and edge region of growing front, and actual growth experiment exhibited that SiC crystal with good quality was obtained with modified hot-zone design without any quality degradation in edge region of bulk crystal. Based on the mapping measurement of FWHM (Full width at half maximum) value in X-ray rocking curve, the crystal quality of SiC crystals from middle and top region of grown ingot was observed to be almost identical. Furthermore, various properties of SiC crystal grown with modified hot-zone design have been systematically investigated.

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Section: Introductionmentioning

confidence: 99%

Modified Hot-Zone Design for Large Diameter 4H-SiC Single Crystal Growth

Choi¹,

Kim²,

Jang³

et al. 2019

MSF

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“…For improving device performance and device yield, the quality of large diameter SiC wafer is important. [1][2][3] In particular, it was well known that high quality SiC epitaxial layer with low defect density can be grown mainly on high quality SiC substrate having low crystal defect and low warpage value. Therefore, the careful control of temperature gradient in the front of growing crystal is crucial on large-sized SiC crystal growth.…”

Section: Introductionmentioning

confidence: 99%

Temperature Gradient Control with an Air-Pocket Design for Growth of High Quality SiC Crystal

Lee

Kim

et al. 2023

SSP

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The hot-zone design using an air-pocket was adopted to produce uniform temperature gradient in horizontal direction. In order to investigate the change of temperature gradient toward horizontal direction with growth time, the front shape of SiC growing crystal was measured with different growth stages such as initial, growing and finished stage. While SiC ingot grown in conventional hot-zone design exhibited inhomogeneous growth front in the initial stage of growth and multi facet formation in final stage, which could result in increased defect density, a homogeneous temperature gradient and improved crystal quality was obtained in the modified hot-zone design. Based on the mapping measurement of FWHM (Full width at half maximum) value in X-ray rocking curve, the crystal quality of SiC crystals grown with the modified hot-zone design was observed to be definitely better than conventional design.

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“…Silicon carbide is one of the most attractive and promising wide band-gap semiconductor materials with high breakdown voltage, high thermal conductivity, and high electron mobility. Commercially available SiC-power-devices of MOSFETs and SBDs are recently fabricated with SiC epitaxial layer grown on n-type 4H-SiC substrates [1][2][3][4][5]. Especially for high power device application, crystalline defects reduction is the inevitable key issue.…”

Section: Introductionmentioning

confidence: 99%

Quality Improvement of 4’’ 4H-SiC Crystal by Using Modified Seed Adhesion Method

Choi¹,

Park²,

Seo³

et al. 2017

MSF

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The method to attach seed to crucible lid as well as seed quality is very important for obtaining high quality crystals. Therefore, modified seeding method was developed for improving adhesive layer between seed and graphite crucible lid. SiC single crystal grown with modified seeding method definitely exhibited lower micropipe density (MPD) and lower full width at half maximum (FWHM) values comparing with values from conventional seeding method. Etch pit density of SiC crystal was successfully decreased with using the modified seeding method.

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A Study of 6H-Seeded 4H-SiC Bulk Growth by PVT

Cited by 11 publications

References 8 publications

Modified Hot-Zone Design for Large Diameter 4H-SiC Single Crystal Growth

Modified Hot-Zone Design for Large Diameter 4H-SiC Single Crystal Growth

Temperature Gradient Control with an Air-Pocket Design for Growth of High Quality SiC Crystal

Quality Improvement of 4’’ 4H-SiC Crystal by Using Modified Seed Adhesion Method

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