A Study of a Newly Developed Kelvin-Source Driven SiC-VMOSFET on a High-Power Single-Ended Wireless EV Charger

Iwanaga, Taichi; Omori, Hideki; Sakamoto, Kunihiro; Morizane, Toshimitsu; Kimura, Noriyuki

doi:10.1109/icrera47325.2019.8997100

Cited by 9 publications

(2 citation statements)

References 20 publications

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“…V groove trench gate construction realizes high breakdown voltage and very low ON‐resistance. Ron of the new device VMOS is only 35 mΩ which is 1 of 3 compared with Ron 83 mΩ of conventional gate device DMOS [2,3].…”

Section: The Dawn Period For Power‐electronics Home Appliancesmentioning

confidence: 99%

A Trend of Home and Consumer Appliances in Japan: The Past 50 Years and the Future

Omori

Kanouda

2021

IEEJ Transactions Elec Engng

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Most of home appliances were put into practical use in the United Kingdom and the United States before early 20th century. However, in Japan, the production of the home appliances began in the 1950s. Home and consumer appliances market had been expanded and developed growing with high growth of Japan in 1950–1970. They are applied by power electronics for improvement of performance and energy saving in 1970s–1990s. After 2000, power generation equipment has been put in practical use. Distributed power systems like a smart house and a virtual power plant are spotlighted now. Internet of things (IoT) technology will make new generation of appliances. In this article, a trend of home and consumer appliances in Japan is explained and discussed viewing the past 50 years and the future. © 2021 Institute of Electrical Engineers of Japan. Published by Wiley Periodicals LLC.

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Section: The Dawn Period For Power‐electronics Home Appliancesmentioning

confidence: 99%

A Trend of Home and Consumer Appliances in Japan: The Past 50 Years and the Future

Omori

Kanouda

2021

IEEJ Transactions Elec Engng

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“…Silicon carbide (SiC) power semiconductors have excellent characteristics such as a high breakdown field, high thermal conductivity, low on-resistance, and fast switching speed compared to those of silicon (Si) power semiconductors [1][2][3][4][5][6][7]. Owing to these advantages, SiC power semiconductors are employed in various applications, such as in electric vehicle chargers [8][9][10], multilevel inverters [11], induction heaters [12], fuel cell systems [13], and wireless power transmission [14].…”

Section: Introductionmentioning

confidence: 99%

Design of Half-Bridge Switching Power Module Based on Parallel-Connected SiC MOSFETs for LLC Resonant Converter with Symmetrical Structure and Low Parasitic Inductance

Park,

Min,

Lee

et al. 2024

Electronics

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SiC MOSFETs are used in many power conversion applications because of their superior characteristics, such as fast switching speed, low on-resistance, and high operating temperature. In certain high-power systems, SiC MOSFETs are connected in parallel to enhance their current capacity and power efficiency. However, compared with Si-based devices, the current imbalance caused by the parasitic inductance difference becomes more severe when driving SiC MOSFETs in parallel, owing to the fast switching speed. Furthermore, the power loop inductance imbalance that occurs when constructing a half-bridge with parallel SiC MOSFETs has rarely been addressed in previous studies. In this study, a half-bridge switching power module based on parallel-connected SiC MOSFETs is proposed to solve the current imbalance through a symmetric structure of the gate and power loops. The effects of the magnitude and imbalance of the gate and power loop inductances in the half-bridge structure based on parallel-connected devices are also explained. A detailed printed circuit board layout of the proposed switching power module is provided, and the inductance symmetry is verified through simulations. A double-pulse test is conducted to verify the current-balancing capability of the proposed switching power module. In addition, an LLC resonant converter is designed using the proposed switching power module, and the power loss between parallel SiC MOSFETs is compared. The experimental results indicate the total power loss error between the parallel-connected SiC MOSFETs of the proposed power module is only 1.94%.

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Research on Circuit Topology and Control Method of ISOS Wireless Charging System

Tian

Líu

2021

2021 IEEE 4th International Electrical and Energy Conference (CIEEC)

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A Study of a Newly Developed Kelvin-Source Driven SiC-VMOSFET on a High-Power Single-Ended Wireless EV Charger

Cited by 9 publications

References 20 publications

A Trend of Home and Consumer Appliances in Japan: The Past 50 Years and the Future

A Trend of Home and Consumer Appliances in Japan: The Past 50 Years and the Future

Design of Half-Bridge Switching Power Module Based on Parallel-Connected SiC MOSFETs for LLC Resonant Converter with Symmetrical Structure and Low Parasitic Inductance

Research on Circuit Topology and Control Method of ISOS Wireless Charging System

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