A study of amorphous and crystalline phases in In2O3–10 wt.% ZnO thin films deposited by DC magnetron sputtering

Yağlıoğlu, Burağ; Huang, Yen-Jung; Yeom, Hyo‐Young; Paine, David C.

doi:10.1016/j.tsf.2005.08.255

Cited by 115 publications

(53 citation statements)

References 8 publications

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“…The conclusion that scattering by the amorphous structure, i.e. low mobility, is not the cause of the lower conductivity is supported by unpublished Hall effect measurements made in the author's laboratory 5 and more recently by similar measurements reported by others [21]. Both groups found similar mobilities of $40-45 cm 2 V À1 s À1 in amorphous (and textured) ITO thin films deposited at RT on PET film substrates.…”

Section: Tco Microstructuresupporting

confidence: 63%

Deposition and Performance Challenges of Transparent Conductive Oxides on Plastic Substrates

Bright¹

2010

Transparent Electronics

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Section: Tco Microstructuresupporting

confidence: 63%

Deposition and Performance Challenges of Transparent Conductive Oxides on Plastic Substrates

Bright¹

2010

Transparent Electronics

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“…The indexes correspond to the bixbite structure of In 2 O 3 [9]. It is found that the diffraction peak height increases with t a .…”

Section: Resultsmentioning

confidence: 97%

Superconductivity in transparent zinc-doped In₂O₃films having low carrier density

Makise¹,

Kokubo²,

Takada³

et al. 2008

Science and Technology of Advanced Materials

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Thin polycrystalline zinc-doped indium oxide (In 2 O 3 -ZnO) films were prepared by post-annealing amorphous films with various weight concentrations x of ZnO in the range 0 x 0.06. We have studied the dependences of the resistivity ρ and Hall coefficient on temperature T and magnetic field H in the range 0.5 T 300 K, H 6 Tfor 350 nm films annealed in air. Films with 0 x 0.03 show the superconducting resistive transition. The transition temperature T c is below 3.3 K and the carrier density n is about 10 25 -10 26 m −3 . The annealed In 2 O 3 -ZnO films were examined by transmission electron microscopy and x-ray diffraction analysis revealing that the crystallinity of the films depends on the annealing time. We studied the upper critical magnetic field H c2 (T ) for the film with x = 0.01. From the slope of dH c2 /dT , we obtain the coherence length ξ(0) ≈ 10 nm at T = 0 K and a coefficient of electronic heat capacity that is small compared with those of other oxide materials.

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“…It is easy to control not only the crystallinity but also the morphology by changing the annealing temperature during the heat treatment in air. Regarding the morphological properties of thick films, [9][10][11][12] the surface roughness as a function of deposition temperature has been reported. However, the relation between the transport characteristics and morphology does not be discussed in detail.…”

confidence: 99%

Weak localization and percolation effects in annealed In2O3-ZnO thin films

et al. 2011

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We have investigated the temperature T and magnetic field H dependences of the sheet resistance R□ of thin (In2O3)0.975-(ZnO)0.025 films with different resistivities and carrier densities prepared by postannealing in air at various annealing temperatures Ta. Regarding the magnetoconductance Δσ(H) ≡ 1/R□(H) − 1/R□(0) of films with large values of sheet resistance R□, agreement between weak localization theory and the data cannot be obtained for any value of the localization length L in (T) = D τ in (T) , where D and τin are the diffusion constant and inelastic scattering time, respectively. Taking account of the inhomogeneous morphology confirmed by Scanning Electron Microscopy (SEM) observation, we introduced the effective sheet resistance R□eff given by R□eff = α × R□meas., where the strength of reduction factor α is less than unit, α ⩽ 1. Using a suitable value of α(Ta), we successfully fitted the theory to data for Δσeff(H, T), regarding Lin2(T) as a fitting parameter in the region 2.0 K⩽T ⩽ 50 K. It was confirmed that the rate 1/τin(T) is given by the sum of the electron-electron and electron-phonon inelastic scattering rates

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A study of amorphous and crystalline phases in In2O3–10 wt.% ZnO thin films deposited by DC magnetron sputtering

Cited by 115 publications

References 8 publications

Deposition and Performance Challenges of Transparent Conductive Oxides on Plastic Substrates

Deposition and Performance Challenges of Transparent Conductive Oxides on Plastic Substrates

Superconductivity in transparent zinc-doped In₂O₃films having low carrier density

Weak localization and percolation effects in annealed In2O3-ZnO thin films

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A study of amorphous and crystalline phases in In2O3–10 wt.% ZnO thin films deposited by DC magnetron sputtering

Cited by 115 publications

References 8 publications

Deposition and Performance Challenges of Transparent Conductive Oxides on Plastic Substrates

Deposition and Performance Challenges of Transparent Conductive Oxides on Plastic Substrates

Superconductivity in transparent zinc-doped In2O3films having low carrier density

Weak localization and percolation effects in annealed In2O3-ZnO thin films

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Superconductivity in transparent zinc-doped In₂O₃films having low carrier density