The authors report on the fabrication and characterization of thin film transistors that use sputter deposited amorphous indium zinc oxide both for the channel and source-drain metallizations in a gate-down configuration. The channel and source-drain layers were deposited from a single In2O3–10wt%ZnO ceramic target using dc magnetron sputtering onto an unheated substrate. The carrier densities in the channel (2.1×1017∕cm3) and source/drain regions (3.3×1020∕cm3) were adjusted by changing the reactive oxygen content in the sputter chamber during deposition. The resulting transistors operate as depletion mode n-channel field effect devices with saturation mobility of 20cm2∕Vs and on/off current ratio of 108.
We report on the crystallization of amorphous indium zinc oxide (a-IZO) with stoichiometry of In2Zn0.38O3.38 (In2O3–10 wt % ZnO) thin films deposited by dc magnetron sputtering. Transmission electron microscopy and glancing incidence x-ray diffraction were used to show that, when annealed in air at 500 °C, the product of a-IZO thin film crystallization is a compositionally modulated crystal of high-pressure corundum In2O3 phase. The composition, microstructure, resistivity, carrier density, and mobility of this new IZO phase are reported and are compared to the bixbyite ITO (In2O3–9.8wt%SnO2) deposited and annealed under identical conditions.
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