A Study of Atomic Layer Deposition and Reactive Plasma Compatibilitywith Mesoporous Organosilicate Glass Films

Ryan, E. Todd; Freeman, Melissa; Svedberg, Lynne M.; Lee, J.J.; Guenther, T.; Connor, J. N.; Yu, Katie; Sun, Jianing; Gidley, David W.

doi:10.1557/proc-766-e10.8

Cited by 9 publications

(3 citation statements)

References 8 publications

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“…Additionally, depth-profiled PAS investigates inhomogeneities present in as-deposited or processed porous low-k films. For example, plasma densification (pore collapse) can result from exposure to plasmas in microchip processing (45,46). This type of "integration damage" can severely compromise the dielectric constant reduction by a low-k material (46) and is one of the main impediments in implementing porous, ultralow-k dielectrics in microelectronics.…”

Section: Detecting Porosity Variations In Film Depthmentioning

confidence: 99%

Positron Annihilation as a Method to Characterize Porous Materials

Gidley

Peng

Vallery

2006

Annu. Rev. Mater. Res.

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311

256

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Key Words porous films, pore size, low dielectric constant, positronium ■ Abstract Beam-based positron annihilation spectroscopy (PAS) is a powerful porosimetry technique with broad applicability in the characterization of nanoporous thin films, especially insulators. Pore sizes and distributions in the 0.3-30 nm range are nondestructively determined with only the implantation of low-energy positrons from a table-top beam. Depth-profiling with PAS has proven to be an ideal way to measure the interconnection length of pores, search for depth-dependent inhomogeneities or damage in the pore structure, and explore porosity hidden beneath dense layers or diffusion barriers. The capability of PAS is rapidly maturing as new intense positron beams around the globe spawn more accessible PAS facilities. After a short primer on the physics of positrons in insulators, the various probe techniques of PAS are briefly summarized, followed by a more detailed discussion of the wide range of nanoporous film parameters that PAS can characterize. 51and sensitivity to processing-induced changes. A unique strength associated with beam-based PAS is the capabilities to depth-profile by controlling the positron implantation energy and to resolve laterally by finely focusing the beam on a small spot on the target. The capability to nondestructively detect depth-dependent pore structural characteristics even when the pores are buried under barrier layers will be an increasingly attractive capability as nanoporous films and composites become more complex.

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Section: Detecting Porosity Variations In Film Depthmentioning

confidence: 99%

Positron Annihilation as a Method to Characterize Porous Materials

Gidley

Peng

Vallery

2006

Annu. Rev. Mater. Res.

Self Cite

311

256

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“…1 Atomic layer deposition ͑ALD͒ is considered to be a key solution and is being actively developed. 9 An in situ chemical analysis of the initial barrier formation process would provide information for better understanding of the issues in pore sealing. Adsorption of precursor molecules on the substrate ͑or ALD nucleation process͒ and the subsequent formation of the interface strongly depend on the terminal groups of the substrate surface.…”

Section: Introductionmentioning

confidence: 99%

Effects of surface chemistry on ALD Ta3N5 barrier formation on low-k dielectrics

Liu

Bao

Scharnberg

et al. 2005

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Articles you may be interested inSurface chemistry of a Cu(I) beta-diketonate precursor and the atomic layer deposition of Cu2O on SiO2 studied by x-ray photoelectron spectroscopy J. Vac. Sci. Technol. A 32, 041505 (2014); 10.1116/1.4878815MoS2 functionalization for ultra-thin atomic layer deposited dielectrics Appl. Phys. Lett.In situ x-ray photoelectron spectroscopy ͑XPS͒ was employed to study the effects of the substrate surface chemistry on atomic layer deposition ͑ALD͒ of Ta-based barrier layers on various low k surfaces. The initial chemisorption was found to be through formation of Ta-O bonding on organosilicates ͑OSG͒ and charge transfer complexes on aromatic SiLK™. ALD process nucleated very slowly on the OSG low-k films, in distinct contrast with its ready nucleation on SiLK™ films. The evolution of the low-k surface chemistry revealed an initial transient growth region controlled mainly by the substrate surface chemistry. Pretreatment of the low-k surfaces with nitrogen and hydrogen radical beams, particularly with nitrogen radicals, was observed to enhance significantly the chemisorption of the TaCl 5 precursor on the OSG surfaces. The enhancement was attributed to dissociation of weakly bonded methyl groups from the low-k surface followed by nitridation with the nitrogen radicals. In the subsequent linear growth region, atomic hydrogen species was able to reduce the chlorine content under appropriate temperature and with sufficient purge. The role of the atomic hydrogen in this process enhancement is discussed.

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“…A number of problems in back-end-of-line (BEoL) integration can also be studied using TOFSIMS (see, for instance, [15][16][17][18]). Here we will present three examples of the use of TOFSIMS in BEoL studies.…”

Section: Back-end-of-line Applicationmentioning

confidence: 99%

Advanced Material Characterization by TOFSIMS in Microelectronic

Conard

Vandervorst

Materials for Information Technology

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A Study of Atomic Layer Deposition and Reactive Plasma Compatibilitywith Mesoporous Organosilicate Glass Films

Cited by 9 publications

References 8 publications

Positron Annihilation as a Method to Characterize Porous Materials

Positron Annihilation as a Method to Characterize Porous Materials

Effects of surface chemistry on ALD Ta3N5 barrier formation on low-k dielectrics

Advanced Material Characterization by TOFSIMS in Microelectronic

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