A study of closed-loop application for logic patterning

Imai, Hidemichi; Yoshikawa, Shingo; Takamizawa, Hideyoshi; Buttgereit, Ute; Thaler, Thomas

doi:10.1117/12.978706

Cited by 4 publications

(3 citation statements)

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“…Requirements for critical dimension uniformity (CDU) control become more demanding as the integrated circuit (IC) feature size specifications become tighter and tighter to ensure high and reliable functionality of the IC [1]. However, many different factors contribute to CDU and result in a non-ideal CDU on wafer [2]. Some factors are related to mask and wafer process, such as mask bulk, mask writing errors, wafer topography, resist process and etching non-uniformity [3].…”

Section: Introductionmentioning

confidence: 99%

How to improve intra-field CDU of contact hole patterns in both X-Y directions with CDC technology

Zeng,

Zhang,

Tang

et al. 2023

Photomask Technology 2023

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Section: Introductionmentioning

confidence: 99%

How to improve intra-field CDU of contact hole patterns in both X-Y directions with CDC technology

Zeng,

Zhang,

Tang

et al. 2023

Photomask Technology 2023

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“…The WLCD measures the CD based on proven aerial imaging technology while applying the exact scanner-used illumination conditions [1,2]. The tool performance was demonstrated with excellent dynamic CD repeatability [5] and with high correlation (R 2 >0.95) to wafer CD data [5]. The CDU improvement was done utilizing the ZEISS CDC32 tool located at a leading edge foundry.…”

Section: Introductionmentioning

confidence: 99%

“…This delta n causes a small amount of light scattering outside of the scanner objective pupil and hence causes light attenuation. The applied attenuation controls the dose profile at wafer level and finally the intra-field CDU [3,4,5].…”

Section: Introductionmentioning

confidence: 99%

Improving wafer level CD uniformity for logic applications utilizing mask level metrology and process

et al. 2013

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Critical Dimension Uniformity (CDU) is one of the key parameters necessary to assure good performance and reliable functionality of any integrated circuit (IC). The extension of 193nm based lithography usage combined with design rule shrinkage makes process control, in particular the wafer level CDU control, an extremely important and challenging task in IC manufacturing.In this study the WLCD-CDC closed loop solution offered by Carl Zeiss SMS was examined. This solution aims to improve the wafer level intra-field CDU without the need to run wafer prints and extensive wafer CD metrology. It combines two stand-alone tools: The WLCD tool which measures CD based on aerial imaging technology while applying the exact scanner-used illumination conditions to the photomask and the CDC tool which utilizes an ultra-short femto-second laser to write intra-volume shading elements (Shade-In Elements™) inside the photomask bulk material. The CDC process changes the dose going through the photomask down to the wafer, hence the wafer level intra-field CDU improves.The objective of this study was to evaluate how CDC process is affecting the CD for different type of features and pattern density which are typical for logic and system on chip (SOC) devices. The main findings show that the linearity and proximity behavior is maintained by the CDC process and CDU and CDC Ratio (CDCR) show a linear behavior for the different feature types. Finally, it was demonstrated that the CDU errors of the targeted (critical) feature have been effectively eliminated. In addition, the CDU of all other features have been significantly improved as well.

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Critical dimension control using ultrashort laser for improving wafer critical dimension uniformity

Avizemer

Sharoni

Oshemkov

et al. 2015

J. Micro/Nanolith. MEMS MOEMS

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A study of closed-loop application for logic patterning

Cited by 4 publications

References 0 publications

How to improve intra-field CDU of contact hole patterns in both X-Y directions with CDC technology

How to improve intra-field CDU of contact hole patterns in both X-Y directions with CDC technology

Improving wafer level CD uniformity for logic applications utilizing mask level metrology and process

Critical dimension control using ultrashort laser for improving wafer critical dimension uniformity

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