EUV mask pattern inspection was investigated using current DUV reticle inspection tool. Designed defect pattern of 65nm node and 45nm node were prepared. We compared inspection sensitivity between before buffer etch pattern and after buffer etch pattern, and between die to die mode and die to database mode. Inspection sensitivity difference was not observed between before buffer etch pattern and after buffer etch pattern. In addition to defect inspection, wafer print simulation of program defect was investigated. Simulation results were compared to inspection result. We confirmed current DUV reticle inspection tool has potential for EUV mask defect inspection.

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