A study of gate recess-width control of InP-based HEMTs by a Si3N4 passivation layer

Xie, Yuying; Zhu, Mingyao; Deng, Jing‐Fa; Chen, Yifang

doi:10.1016/j.mee.2021.111675

Cited by 3 publications

(1 citation statement)

References 14 publications

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“…Oxide thin-film transistors (TFTs) serving as the driving backplane are crucial for managing pixel operations efficiently, requiring layers with specific accumulation characteristics provided by the gate insulating layer. Traditional dielectric materials like silicon dioxide (SiO2) and silicon nitride (Si3N4) fall short in achieving low power consumption and high reliability in amorphous oxide TFT backplanes due to their low permittivity [5][6][7][8] . In contrast, metal oxide dielectrics with high permittivity offer enhanced areal capacitance and reduced leakage current, enabling lower operating voltages and improved device performance.…”

Section: Introductionmentioning

confidence: 99%

35‐1: Invited Paper: High‐quality high‐k ZrO₂‐based dielectric film with low leakage current

Liu,

Chen,

Liao

et al. 2024

Symp Digest of Tech Papers

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With the miniaturization and integration of wearable electronics, there are some serious problems such as signal crosstalk and high power consumption that restrict its development. Active‐matrix thin‐film transistors (TFTs) with high permittivity (high‐k) insulator layer provide a promising opportunity for reducing signal crosstalk and power consumption of wearable electronics. Here, we propose a simple and cost‐effective gradient heating‐up strategy to prepare high‐k zirconium dioxide (ZrO 2)‐based dielectric films. Amorphous ZrO 2 films annealed at 400°C exhibits a high transmittance and a high dielectric properties of a relative low leakage current (10‐8 A/cm2 ) and large capacitance density of 215 nF/cm2 . To meet requirements of flexible wearable electronics, ZrO 2‐organic polymer hybrid dielectric film was further developed. A smooth surface morphology (Sa=0.478 nm) and good dielectric performance (~10‐8 A/cm2 ) of ZrO 2‐based hybrid film was obtained at 250°C, which can promote the development of flexible TFT and extend the application scenarios of wearable electronics.

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Section: Introductionmentioning

confidence: 99%

35‐1: Invited Paper: High‐quality high‐k ZrO₂‐based dielectric film with low leakage current

Liu,

Chen,

Liao

et al. 2024

Symp Digest of Tech Papers

View full text Add to dashboard Cite

show abstract

Investigation of performance enhancement of a recessed gate field-plated AlGaN/AlN/GaN nano-HEMT on β-Ga2O3 substrate with variation of AlN spacer layer thickness

Rao

Lenka

Boukortt

et al. 2023

J Mater Sci: Mater Electron

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Impact of SiO2 hardmask on the DC and RF characteristics of InP HEMTs

Zhou,

Feng,

Cao

et al. 2023

J Mater Sci: Mater Electron

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A study of gate recess-width control of InP-based HEMTs by a Si3N4 passivation layer

Cited by 3 publications

References 14 publications

35‐1: Invited Paper: High‐quality high‐k ZrO₂‐based dielectric film with low leakage current

35‐1: Invited Paper: High‐quality high‐k ZrO₂‐based dielectric film with low leakage current

Investigation of performance enhancement of a recessed gate field-plated AlGaN/AlN/GaN nano-HEMT on β-Ga2O3 substrate with variation of AlN spacer layer thickness

Impact of SiO2 hardmask on the DC and RF characteristics of InP HEMTs

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A study of gate recess-width control of InP-based HEMTs by a Si3N4 passivation layer

Cited by 3 publications

References 14 publications

35‐1: Invited Paper: High‐quality high‐k ZrO2‐based dielectric film with low leakage current

35‐1: Invited Paper: High‐quality high‐k ZrO2‐based dielectric film with low leakage current

Investigation of performance enhancement of a recessed gate field-plated AlGaN/AlN/GaN nano-HEMT on β-Ga2O3 substrate with variation of AlN spacer layer thickness

Impact of SiO2 hardmask on the DC and RF characteristics of InP HEMTs

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35‐1: Invited Paper: High‐quality high‐k ZrO₂‐based dielectric film with low leakage current

35‐1: Invited Paper: High‐quality high‐k ZrO₂‐based dielectric film with low leakage current