A study of He+ ion-induced damage in silicon by quantitative analysis of charge collection efficiency data

Nipoti, Roberta; Donolato, C.; Govoni, D.; Rossi, Pier Luca; Egeni, G.P.; Rudello, V.

doi:10.1016/s0168-583x(97)00849-5

Cited by 9 publications

(10 citation statements)

References 8 publications

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“…on the distance between adjacent spots (L S ))-see figures 3 and S-3. This AFM-based finding is in line with the local swelling of the patterned surface region as visualized by TEM and SEM for similar He + -FIB experiments [8,20].…”

Section: Surface Topography Of the Patterned Interface: Afmsupporting

confidence: 84%

“…With increasing D S , we observe a systematic height increase of the whole patterned subfield region, Ωh. For the lowest doses D S ∼ = 0.01D 0 , Ωh is scarcely distinguishable from the background, but at the highest dose, D 0 , the height increase is approximately 16 nm-as also observed in previous work [20]. He + ions, incident on a covalently stabilized network, can penetrate the host lattice and be trapped, leading e.g.…”

Section: Surface Topography Of the Patterned Interface: Afmsupporting

confidence: 81%

“…At larger ion doses the area surrounding these narrow trenches swells up by ca. 50 nm due to damage of the underlying SiO 2 lattice [20].…”

Section: Introductionmentioning

confidence: 99%

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Nanoscale patterning at the Si/SiO₂/graphene interface by focused He⁺ beam

Böttcher¹,

Schwaiger²,

Pazdera³

et al. 2020

Nanotechnology

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We have studied the capability of He+ focused ion beam (He+-FIB) patterning to fabricate defect arrays on the Si/SiO2/Graphene interface using a combination of atomic force microscopy (AFM) and Raman imaging to probe damage zones. In general, an amorphized ‘blister’ region of cylindrical symmetry results upon exposing the surface to the stationary focused He+ beam. The topography of the amorphized region depends strongly on the ion dose, DS , (ranging from 103 to 107ions/spot) with craters and holes observed at higher doses. Furthermore, the surface morphology depends on the distance between adjacent irradiated spots, LS . Increasing the dose leads to (enhanced) subsurface amorphization and a local height increase relative to the unexposed regions. At the highest areal ion dose, the average height of a patterned area also increases as ∼1/LS . Correspondingly, in optical micrographs, the µm2-sized patterned surface regions change appearance. These phenomena can be explained by implantation of the He+ ions into the subsurface layers, formation of helium nanobubbles, expansion and modification of the dielectric constant of the patterned material. The corresponding modifications of the terminating graphene monolayer have been monitored by micro Raman imaging. At low ion doses, DS , the graphene becomes modified by carbon atom defects which perturb the 2D lattice (as indicated by increasing D/G Raman mode ratio). Additional x-ray photoionization spectroscopy (XPS) measurements allow us to infer that for moderate ion doses, scattering of He+ ions by the subsurface results in the oxidation of the graphene network. For largest doses and smallest LS values, the He+ beam activates extensive Si/SiO2/C bond rearrangement and a multicomponent material possibly comprising SiC and silicon oxycarbides, SiOC, is observed. We also infer parameter ranges for He+-FIB patterning defect arrays of potential use for pinning transition metal nanoparticles in model studies of heterogeneous catalysis.

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Section: Surface Topography Of the Patterned Interface: Afmsupporting

confidence: 84%

Section: Surface Topography Of the Patterned Interface: Afmsupporting

confidence: 81%

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Nanoscale patterning at the Si/SiO₂/graphene interface by focused He⁺ beam

Böttcher¹,

Schwaiger²,

Pazdera³

et al. 2020

Nanotechnology

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“…2 For the description of the diffusion driven case there are different approaches [14,15], which show good agreement with the experimental data for not very high fluences (610 12 ion/cm 2 ). Since the scope of the present article is the drift dominated case, characteristic of high performance detector regime, we focus on charge carrier loss due to radiation-induced trapping.…”

Section: Resultssupporting

confidence: 69%

Empirical approach to the description of spectral performance degradation of silicon photodiodes used as particle detectors

Novák

Simón

Pastuović

et al. 2009

Nuclear Instruments and Methods in Physics Research Section B:

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“…Vacancy related point defects in n-type silicon and their thermal activation energies, annealing temperatures and energies levels in a repect to the band edges, relations(51) and(52).…”

mentioning

confidence: 99%

Accelerator-Based Nuclear Techniques for Processing and Characterization of Oxide Semiconductors for Solar Energy Conversion

Pastuović

Ionescu

Vittone

et al. 2016

SSP

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Accelerator-based nuclear techniques are an important tool for the modification and characterization of surfaces in general, down to a depth of around one micrometer. For oxide semiconductors used in solar energy conversion, the surface plays a critical role in facilitating the use of solar photon energy to obtain hydrogen via spontaneous water oxidation. For such a process, the required surface properties are complex and include specific chemical composition, as well as the defect composition, and both of these characteristics may be augmented using accelerator-based nuclear techniques. The targeted modification of surfaces makes use of ion implantation for changing the chemical composition, and ion irradiation for changing the defect structure. The defect formation is a very complex process, and in this work we placed more emphasis on this aspect. We attempted to present the defect formation under the irradiation of ion beams at the two extremes: formation of extensive and large-scale cluster defects; and formation of small-scale point defects. In addition, we review the main characterization techniques based on ion beams, with examples from work carried out on semiconductors and oxide semiconductors.

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A study of He+ ion-induced damage in silicon by quantitative analysis of charge collection efficiency data

Cited by 9 publications

References 8 publications

Nanoscale patterning at the Si/SiO₂/graphene interface by focused He⁺ beam

Nanoscale patterning at the Si/SiO₂/graphene interface by focused He⁺ beam

Empirical approach to the description of spectral performance degradation of silicon photodiodes used as particle detectors

Accelerator-Based Nuclear Techniques for Processing and Characterization of Oxide Semiconductors for Solar Energy Conversion

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A study of He+ ion-induced damage in silicon by quantitative analysis of charge collection efficiency data

Cited by 9 publications

References 8 publications

Nanoscale patterning at the Si/SiO2/graphene interface by focused He+ beam

Nanoscale patterning at the Si/SiO2/graphene interface by focused He+ beam

Empirical approach to the description of spectral performance degradation of silicon photodiodes used as particle detectors

Accelerator-Based Nuclear Techniques for Processing and Characterization of Oxide Semiconductors for Solar Energy Conversion

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Product

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Nanoscale patterning at the Si/SiO₂/graphene interface by focused He⁺ beam

Nanoscale patterning at the Si/SiO₂/graphene interface by focused He⁺ beam