Abstract:This paper presents an experimental and theoretical study of longitudinal and
transversal range parameters of molybdenum ions ranging from 40 to 360 keV
implanted in silicon. In the experimental part of this study, silicon wafers were tilted
by 7° and 55° at the time they were implanted with molybdenum ions. The
implanted-ion depth profiles were detected by means of secondary ion
mass specfroscopy (SIMS) measurements. The
measured range parameters were extracted from fitting the measured… Show more
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