A study of microstructure and nanomechanical properties of silicon incorporated DLC films deposited on silicon substrates

Zhao, Jinchao; Lemoine, P.; Zh, Liu; Quinn, JP; Maguire, Paul; McLaughlin, James

doi:10.1016/s0925-9635(00)00544-6

Cited by 96 publications

(46 citation statements)

References 29 publications

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“…Thin hydrogenated amorphous carbon (a-C:H) films were prepared by (13.56 MHz) PECVD (DIAVAC ACM Ltd. Model: RF10S) system in a capacitively coupled radio frequency chamber using acetylene as a precursor gas, as described previously [24]. From previous studies on the deposition of a-C:H film on Silicon substrates [25][26][27][28][29], we know that hard and stiff a-C:H film on Si (H~10-20 GPa, E~100-200 GPa) can be prepared with selfbias voltages varying from -100V to -500V. This study is not designed as a thorough investigation of the self-bias conditions for the preparation of a-C:H films on PDMS, hence we selected an intermediate value; -250V, deemed adequate for the present purpose.…”

Section: Methodsmentioning

confidence: 99%

Amorphous carbon interlayers for gold on elastomer stretchable conductors

Manzoor¹,

Tuinea‐Bobe²,

McKavanagh³

et al. 2011

J. Phys. D: Appl. Phys.

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Gold on polydimethylsiloxane (PDMS) stretchable conductors were prepared using a novel approach by interlacing an hydrogenated amorphous carbon (a-C:H) layer between the deposited metal layer and the elastomer. AFM analysis of the a-C:H film surface before gold deposition shows nanoscale buckling, the corresponding increase in specific surface area corresponds to a strain compensation for the first 4-6 % of bi-axial tensile loading. Without this interlayer, the deposited gold films show much smaller and uni-directional ripples as well as more cracks and delaminations. With a-C:H interlayer, the initial electrical resistivity of the metal film decreases markedly (280-fold decrease to 8x10 -6 Ω.cm). This is not due to conduction within the carbon interlayer; both a-C:H/PDMS and PDMS substrates are electrically insulating. Upon cyclic tensile loading, both films become more resistive, but return to their initial state after 20 tensile cycles up to 60% strain. Profiling experiments using Secondary ion mass spectroscopy (SIMS) and X-ray photoelectron spectroscopy (XPS) indicate that the a-C:H layer intermixes with the PDMS, resulting in a graded layer of decreasing stiffness. We believe that both this graded layer and the surface buckling contribute to the observed improvement in the electrical performance of these stretchable conductors.

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Section: Methodsmentioning

confidence: 99%

Amorphous carbon interlayers for gold on elastomer stretchable conductors

Manzoor¹,

Tuinea‐Bobe²,

McKavanagh³

et al. 2011

J. Phys. D: Appl. Phys.

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“…Although there is a general acceptance that silicon incorporation promotes reduction of internal stresses, the results concerning other properties are not as generally accepted. For instance, hardness of hydrogenated DLC:Si had been reported to be insensitive to the silicon content up to 50% Si [2] or to decrease with increasing Si content [6]. Notice that the hardness of amorphous SiC has been reported to be of around 20 -25 GPa [7,8], which is reasonably close to that of a-C:H (hydrogenated DLC).…”

Section: Introductionmentioning

confidence: 95%

Investigation of non-hydrogenated DLC:Si prepared by cathodic arc

Monteiro¹,

Delplancke‐Ogletree²

2003

Surface and Coatings Technology

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Abstract:Non-hydrogenated DLC films (also referred as ta-C) have been extensively studied and are used for a variety of wear related applications. Alloying DLC with refractory metals and other elements have been shown to be promising techniques to overcome some of the problems associated with pure DLC, such as excessive level of intrinsic stresses and high-temperature stability. The microstructure of DLC:Me in general consists of crystalline metal carbides dispersed in a DLC matrix. In contrary, DLC:Si has an amorphous structure. We have used filtered cathodic arc to prepare DLC:Si up to 6% Si, and have characterized their structure and bonding using microscopy (TEM) and spectroscopy (XPS, NEXAFS). The effect of Si in changing the bonding configuration of the C network is discussed. The microstructure is then correlated to hardness and friction measured by nano-indentation and micro-wear.

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“…Recently, attempts have also been made to decrease the coefficient of friction by adding a third element. Silicon-incorporated DLC (Si-DLC) film is one of them [6][7][8][9][10]. Oguri and Arai [6,8] reported a very low coefficient of friction of Si-DLC film.…”

Section: Introductionmentioning

confidence: 99%

Effect of environment on the tribological behavior of Si-incorporated diamond-like carbon films

Yang

Kong

Lee

et al. 2002

Wear

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An experimental study was performed to discover the effect of environment on the tribological behavior of Si-incorporated diamond-like carbon (Si-DLC) film slid against a steel ball. The films were deposited on Si (1 0 0) wafers by a radio frequency glow discharge of mixtures of benzene and dilute silane gases. Experiments using a ball-on-disk test-rig were performed in vacuum, dry air and ambient air. It was observed that coefficient of friction decreased as the environment changed from vacuum to dry air. Results also showed that low and stable friction related closely to the smoothening of track surfaces and the formation of silicon-rich oxide debris.

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A study of microstructure and nanomechanical properties of silicon incorporated DLC films deposited on silicon substrates

Cited by 96 publications

References 29 publications

Amorphous carbon interlayers for gold on elastomer stretchable conductors

Amorphous carbon interlayers for gold on elastomer stretchable conductors

Investigation of non-hydrogenated DLC:Si prepared by cathodic arc

Effect of environment on the tribological behavior of Si-incorporated diamond-like carbon films

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