A study of minority carrier lifetime versus doping concentration in <i>n</i>-type GaAs grown by metalorganic chemical vapor deposition

Lush, G.B.; MacMillan, H.F.; Keyes, B. M.; Levi, Dean H.; Melloch, M. R.; Ahrenkiel, R. K.; Lundstrom, Mark

doi:10.1063/1.351704

Cited by 63 publications

(22 citation statements)

References 24 publications

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“…It is important to note that care must be taken in interpreting the parameter B rad for any structure, because it cannot be considered as a material constant in PLbased measurements since it is strongly influenced by photon recycling. 9,15 For example, the thickness of the DH, its cladding layers, the presence of an anti-reflection coating, and the substrate/back mirror configuration will play a strong role in the strength of the photon recycling effect. This results in an effective radiative recombination coefficient B eff rad that is observed in the PL-based measurements and is adopted in this study.…”

Section: Theoretical Background a Steady-state Conditionsmentioning

confidence: 99%

Nonradiative lifetime extraction using power-dependent relative photoluminescence of III-V semiconductor double-heterostructures

Walker

Heckelmann

Karcher

et al. 2016

Journal of Applied Physics

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A power-dependent relative photoluminescence measurement method is developed for double-heterostructures composed of III-V semiconductors. Analyzing the data yields insight into the radiative efficiency of the absorbing layer as a function of laser intensity. Four GaAs samples of different thicknesses are characterized, and the measured data are corrected for dependencies of carrier concentration and photon recycling. This correction procedure is described and discussed in detail in order to determine the material's Shockley-Read-Hall lifetime as a function of excitation intensity. The procedure assumes 100% internal radiative efficiency under the highest injection conditions, and we show this leads to less than 0.5% uncertainty. The resulting GaAs material demonstrates a 5.7 ± 0.5 ns nonradiative lifetime across all samples of similar doping (2–3 × 1017 cm−3) for an injected excess carrier concentration below 4 × 1012 cm−3. This increases considerably up to longer than 1 μs under high injection levels due to a trap saturation effect. The method is also shown to give insight into bulk and interface recombination.

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Section: Theoretical Background a Steady-state Conditionsmentioning

confidence: 99%

Nonradiative lifetime extraction using power-dependent relative photoluminescence of III-V semiconductor double-heterostructures

Walker

Heckelmann

Karcher

et al. 2016

Journal of Applied Physics

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“…Figure 1 shows the PL decays under three different excitation levels for the 0.42 pm film doped at 5.5 x 1017 ~m -~. This intensity dependent PL decay is similar to that reported in the case of GaAs (8) and AlGaAs (9) where this behavior has been used to support that SRH recombination dominates in these semiconductors. This behavior can be attributed to the variations in the SRH lifetime due to saturation of deep levels.…”

Section: Dopingsupporting

confidence: 76%

Time-resolved photoluminescence studies on transferred thin film InP epilayers

Augustine

Keyes²,

Jokerst³

et al.

1993 (5th) International Conference on Indium Phosphide and Related Materials

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Time-resolved photoluminescence (TRPL) data are reported for the first time on InP thin films transferred on glass substrates. The films were kept below 1.1 pm in thickness to reduce the photon recycling effect. The data were taken by means of the time-correlated single photon counting technique. The thin films were grown by the liquid phase epitaxial process. The lower doped n-type samples (no c 5 x 10l8 c m 4 showed evidence of Shockiey-Read-Hall (SRH) recombination. For higher electron densities (no > 5 x 10l8 cmS), the lifetime is found to be controlled by the radiative recombination process and an estimate of the B coefficient was made in terms of the photon recycling factor.

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“…It is hypothesized that low doping concentrations should be utilized to achieve longer non-radiative lifetimes, namely in the emitter, since doping can influence the SRH process in n-type GaAs [27,28]. Note that as the doping is decreased, a number of effects come into play, such as a decreased built-in voltage, a higher bandgap in the emitter due to less bandgap narrowing, and the space charge region begins to extend further into the emitter, which also assists in collecting photogenerated minority carriers.…”

Section: B Influence Of Electron and Hole Srh Lifetimes On V Ocmentioning

confidence: 99%

Impact of photon recycling and luminescence coupling in III-V photovoltaic devices

et al. 2015

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Single junction photovoltaic devices composed of direct bandgap III-V semiconductors such as GaAs can exploit the effects of photon recycling to achieve record-high open circuit voltages. Modeling such devices yields insight into the design and material criteria required to achieve high efficiencies. For a GaAs cell to reach 28 % efficiency without a substrate, the Shockley-Read-Hall (SRH) lifetimes of the electrons and holes must be longer than 3 s and 100 ns respectively in a 2 m thin active region coupled to a very high reflective (>99%) rear-side mirror. The model is generalized to account for luminescence coupling in tandem devices, which yields direct insight into the top cell's non-radiative lifetimes. A heavily current mismatched GaAs/GaAs tandem device is simulated and measured experimentally as a function of concentration between 3 and 100 suns. The luminescence coupling increases from 14 % to 33 % experimentally, whereas the model requires an increasing SRH lifetime for both electrons and holes to explain these experimental results. However, intermediate absorbing GaAs layers between the two sub-cells may also increasingly contribute to the luminescence coupling as a function of concentration.

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A study of minority carrier lifetime versus doping concentration in n-type GaAs grown by metalorganic chemical vapor deposition

Cited by 63 publications

References 24 publications

Nonradiative lifetime extraction using power-dependent relative photoluminescence of III-V semiconductor double-heterostructures

Nonradiative lifetime extraction using power-dependent relative photoluminescence of III-V semiconductor double-heterostructures

Time-resolved photoluminescence studies on transferred thin film InP epilayers

Impact of photon recycling and luminescence coupling in III-V photovoltaic devices

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