Time-resolved photoluminescence decay measurements are used to explore minority carrier recombination in n-type GaAs grown by metalorganic chemical vapor deposition, and doped with selenium to produce electron concentrations from 1.3 X lOi cmm3 to 3.8 X 10" cmm3. For electron densities no < 10" cme3, the lifetime is found to be controlled by radiative recombination and photon recycling with no evidence of Shockley-Read-Hall recombination. For higher electron densities, samples show evidence of Shockley-Read-Hall recombination as reflected in the intensity dependence of the photoluminescence decay. Still, we find that radiative recombination and photon recycling are important for all electron concentrations studied, and no evidence for Auger recombination was observed.

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Minority carrier lifetimes of metalorganic chemical vapor deposition longwavelength infrared HgCdTe on GaAs AIP Conf.We are reporting here the hole or minority-carrier lifetime in n-type GaAs over a c?ncentration range from 1 X 10 17 to 2 X 10 18 cm -3. The lifetimes were re~olved by. means .of tlm~-r~solved photoluminescence using the time-resolved single photon countrng techntque. ~~agnostlc ~sotype double heterostructures were grown by metalorganic chemical vapor depOSItion. The Isotype double heterostructures had confinement layers of composition Alo.3Gao.7As. At a fixed majority-carrier concentration, active layer thicknesses were varie~ from -?2~ to .10.0 p,m.Using the accepted B coefficient as 2 X 10 -10 cm 3 Is, the photolummes~ence ltfetIm~ IS over an order of magnitude larger than the radiative lifetime. The data were 10terpreted 10 terms of photon recycling, and the experimental results agreed quite well with theory.