Microsecond lifetimes and low interface recombination velocities in moderately doped <i>n</i>-GaAs thin films

Lush, G.B.; Melloch, M. R.; Lundstrom, Mark; Levi, Dean H.; Ahrenkiel, R. K.; MacMillan, H.F.

doi:10.1063/1.108190

Cited by 32 publications

(10 citation statements)

References 15 publications

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“…Taking into account the rate equation dn/dt = G eh − n/τ = 0, then n = G eh τ , where n is the number of electron-hole pairs generated by laser irradiation with no strain effect and τ is the nonradiative recombination lifetime. Referring to the literature, 16 the order of τ in GaAs is 1 × 10 −7 -1 × 10 −6 s, which is close to the experimentally obtained response time of the backaction force (1.6 × 10 −7 s). If we assume τ = τ ave = 1.6 × 10 −7 s (Fig.…”

Section: Appendix B: Estimation Of the Optopiezoelectric Effectsupporting

confidence: 87%

“…(2a) and (2b), the response time is given by The resulting τ ave is on the order of the nonradiative recombination lifetime in GaAs. 16,17 This also suggests that this dynamic backaction is associated with the spatial separation of electrons and holes. We also performed a direct measurement of the response time by applying a modulated Ti:Sa laser beam.…”

Section: Response Timementioning

confidence: 97%

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Carrier-mediated optomechanical coupling in GaAs cantilevers

et al. 2011

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We have investigated optomechanical coupling in n-GaAs/i-GaAs bilayer cantilevers induced by optical band-gap excitation. The strain-assisted optopiezoelectric effect, which is associated with the separation of electron-hole pairs due to the built-in electric field, causes a time-delayed backaction force and influences the thermal vibration of the cantilevers. Vibration of the [110]-oriented cantilever is amplified by this optopiezoelectric backaction and the self-oscillation is induced for the strong excitation. In contrast, for the [110]-oriented cantilever, the optopiezoelectric backaction deamplifies the vibration because the direction of the piezoelectric stress is reversed. We have experimentally extracted the response time of this optopiezoelectric backaction, where the delay is on the order of the nonradiative recombination lifetime in GaAs. This optopiezoelectric backaction is maximized when the laser wavelength matches the optical absorption edge. This is because the strain-induced change in the optical absorption is maximized at the absorption edge and therefore a large force gradient results.

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Section: Appendix B: Estimation Of the Optopiezoelectric Effectsupporting

confidence: 87%

Section: Response Timementioning

confidence: 97%

Carrier-mediated optomechanical coupling in GaAs cantilevers

et al. 2011

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“…1) are two popular materials for high efficiency solar cells. It has been found that many materials, such as AlGaAs and GaInP, [2][3][4][5][6] provide sufficient carrier confinement to GaAs, which prevents carriers from reaching the top surface of the epilayers and thus effectively reduces the surface recombination rate by providing a heterojunction interface. The interface recombination velocity (IRV) of a high quality GaAs/Al 0.5 Ga 0.…”

mentioning

confidence: 99%

Determination of CdTe bulk carrier lifetime and interface recombination velocity of CdTe/MgCdTe double heterostructures grown by molecular beam epitaxy

Zhao

DiNezza

Shi

et al. 2014

Applied Physics Letters

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“…Landauer's first criticism is much more difficult to rebut. Photon recycling is not an unheard of concept in solid state systems [46,47,48,49] but it is difficult. The requirement that the pulse shape remain undistorted in any wave guide is a tall order.…”

Section: Connecting Toffoli-fredkin Gatesmentioning

confidence: 99%

Quantum Information Science from the Perspective of a Device and Materials Engineer

Bandyopadhyay

2003

Advanced Semiconductor and Organic Nano-Techniques

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This chapter presents a bird's eye view of the rapidly burgeoning field of quantum information science. It is intended for a materials scientist, an electrical engineer in the solid state subdiscipline, or a condensed matter physicist. Four areas of quantum information science are discussed: quantum computing, quantum cryptography, quantum teleportation and quantum memory. Emphasis is placed on the first sub-area since that is where materials science and condensed matter physics is expected to have the strongest impact.

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Microsecond lifetimes and low interface recombination velocities in moderately doped n-GaAs thin films

Abstract: Articles you may be interested inLow resistivity ohmic contacts to moderately doped nGaAs with lowtemperature processing

Cited by 32 publications

References 15 publications

Carrier-mediated optomechanical coupling in GaAs cantilevers

Carrier-mediated optomechanical coupling in GaAs cantilevers

Determination of CdTe bulk carrier lifetime and interface recombination velocity of CdTe/MgCdTe double heterostructures grown by molecular beam epitaxy

Quantum Information Science from the Perspective of a Device and Materials Engineer

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