Determination of CdTe bulk carrier lifetime and interface recombination velocity of CdTe/MgCdTe double heterostructures grown by molecular beam epitaxy

Zhao, Xin; DiNezza, Michael J.; Shi, Liyi; Campbell, Calli M.; Zhao, Yuan; Zhang, Yong-Hang

doi:10.1063/1.4904993

Cited by 50 publications

(12 citation statements)

References 17 publications

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“…In particular, S top was reduced by a factor varying from nine to five going from ~900 cm/s for the reference to ~110 cm/s and ~200 cm/s for the Cl-PEAI and F-PEAI samples respectively, as shown in Table 2 . For unpassivated classical semiconductors, surface recombination velocities are of the order of 10 5 –10 6 cm/s 34 – 36 , while passivated surfaces may reach low values in the range of 10–10 2 cm/s 34 , 37 , 38 . For perovskite films, even unpassivated, we 39 , 40 and others 34 , 41 have found surface recombination velocities of the order of 10 3 cm/s which are fully compatible with our present analysis.…”

Section: Resultsmentioning

confidence: 99%

Imaging and quantifying non-radiative losses at 23% efficient inverted perovskite solar cells interfaces

et al. 2022

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Interface engineering through passivating agents, in the form of organic molecules, is a powerful strategy to enhance the performance of perovskite solar cells. Despite its pivotal function in the development of a rational device optimization, the actual role played by the incorporation of interfacial modifications and the interface physics therein remains poorly understood. Here, we investigate the interface and device physics, quantifying charge recombination and charge losses in state-of-the-art inverted solar cells with power conversion efficiency beyond 23% - among the highest reported so far - by using multidimensional photoluminescence imaging. By doing that we extract physical parameters such as quasi-Fermi level splitting (QFLS) and Urbach energy enabling us to assess that the main passivation mechanism affects the perovskite/PCBM ([6,6]-phenyl-C61-butyric acid methyl ester) interface rather than surface defects. In this work, by linking optical, electrical measurements and modelling we highlight the benefits of organic passivation, made in this case by phenylethylammonium (PEAI) based cations, in maximising all the photovoltaic figures of merit.

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Section: Resultsmentioning

confidence: 99%

Imaging and quantifying non-radiative losses at 23% efficient inverted perovskite solar cells interfaces

et al. 2022

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“…In this effect, photons emitted at higher energy are absorbed before escaping the sample surface due to the wavelength-dependent optical absorption coefficient. [7,9,17] This results in the subtle red-shift observed in the emission spectra of Fig. 1.…”

Section: Methodsmentioning

confidence: 99%

“…Similarly, studies of CdTe absorber layer passivation by CdMgTe barrier layers are reported in Refs. [7,21] which report the effect of passivation on the parameter in Eq. 2.…”

Section: Methodsmentioning

confidence: 99%

“…[6,7] This improvement in lifetime () was attributed to significant reduction of the interface defect states owing to the presence of the high-quality interface with the CdMgTe barrier layer. [6] Recently, a CdTe/CdMgTe DHs/InSb based solar cell has shown an open circuit voltage over 1 V, which illustrates the potential improvement in solar cell performance when incorporating CdMgTe DH confinement layers.…”

Section: Introductionmentioning

confidence: 99%

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Effect of free-carrier concentration and optical injection on carrier lifetimes in undoped and iodine doped CdMgTe/CdSeTe double heterostructures grown by molecular beam epitaxy

Sohal¹,

Edirisooriya²,

Ogedengbe³

et al. 2016

J. Phys. D: Appl. Phys.

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“…However, this efficiency is still below the Shockley-Queisser limit [2,3], and thus, various methods have been proposed [4,5] to further improve the performance of CdTe solar cells. The properties of CdTe materials and their effects on CdTe PV cells were evaluated in a recent study [6,7]. For CdS-and CdTe-based devices, J sc has already been optimized; for an optimal J sc , the total carrier lifetime should be a few nanoseconds with a hole density in the range 10 13 to 10 15 cm −3 [8,9].…”

Section: Introductionmentioning

confidence: 99%

Performance Comparison of CdTe:Na, CdTe:As, and CdTe:P Single Crystals for Solar Cell Applications

Kim

Hong

et al. 2022

Materials

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We compared thermal stability, open-circuit voltage, short-circuit current, and fill factor values of single-crystal Cadmium telluride (CdTe) grown using the vertical Bridgman (VB) technique and doped with group V elements (phosphorus and arsenic), and group Ⅰ element (sodium), followed by an annealing process. The sodium-doped CdTe maintained a hole density of 1016 cm−3 or higher; after annealing for a long time, this decreased to 1015 cm−3 or less. The arsenic-doped CdTe maintained a hole density of approximately 1016 cm−3 even after the annealing process; however its bulk minority carrier lifetime decreased by approximately 10%. The phosphorus-doped CdTe maintained its properties after the annealing process, ultimately achieving a hole density of ~1016 cm−3 and a minority carrier lifetime of ~40 ns. The characteristics of a single-crystal solar cell were evaluated using a solar cell device that contained single-crystal CdTe with various dopants. The sodium-doped sample exhibited poor interfacial properties, and its performance decreased rapidly during annealing. The samples doped with group V elements exhibited stable characteristics even during long-term annealing. We concluded, therefore, that group V elements dopants are more suitable for CdTe single-crystal-based solar cell applications involving thermal stress conditions, such as space missions or extreme fabrication temperature environments.

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Determination of CdTe bulk carrier lifetime and interface recombination velocity of CdTe/MgCdTe double heterostructures grown by molecular beam epitaxy

Abstract: Radiative and nonradiative recombination processes in lattice-matched (Cd,Zn)O/(Mg,Zn)O multiquantum wells

Cited by 50 publications

References 17 publications

Imaging and quantifying non-radiative losses at 23% efficient inverted perovskite solar cells interfaces

Imaging and quantifying non-radiative losses at 23% efficient inverted perovskite solar cells interfaces

Effect of free-carrier concentration and optical injection on carrier lifetimes in undoped and iodine doped CdMgTe/CdSeTe double heterostructures grown by molecular beam epitaxy

Performance Comparison of CdTe:Na, CdTe:As, and CdTe:P Single Crystals for Solar Cell Applications

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