Minority-carrier lifetime and photon recycling in n-GaAs

Abstract

Minority carrier lifetimes of metalorganic chemical vapor deposition longwavelength infrared HgCdTe on GaAs AIP Conf.We are reporting here the hole or minority-carrier lifetime in n-type GaAs over a c?ncentration range from 1 X 10 17 to 2 X 10 18 cm -3. The lifetimes were re~olved by. means .of tlm~-r~solved photoluminescence using the time-resolved single photon countrng techntque. ~~agnostlc ~sotype double heterostructures were grown by metalorganic chemical vapor depOSItion. The Isotype double heterostructures had confinement layers of composition Alo.3Gao.7As. At a fixed majority-carrier concentration, active layer thicknesses were varie~ from -?2~ to .10.0 p,m.Using the accepted B coefficient as 2 X 10 -10 cm 3 Is, the photolummes~ence ltfetIm~ IS over an order of magnitude larger than the radiative lifetime. The data were 10terpreted 10 terms of photon recycling, and the experimental results agreed quite well with theory.

Active tuning of surface phonon polariton resonances via carrier photoinjection

“…2b), indicating a dramatic decrease in compared to the low-pump-intensity regime. It is expected that should decrease with increasing due to reduced effective radiative recombination lifetime, 44,45 suppressed photon reabsorption, 46 reduced surface band bending that increases surface recombination, and increased carrier diffusion out of the pillars. 44,47 In addition, localized pillar heating may also contribute to the observed saturation, most likely because of the temperature-dependent shift of the phonon energies.…”

Manipulating the Net Radiative Recombination Rate in Lead Halide Perovskite Films by Modification of Light Outcoupling

“…21 (ii) The obtained (external) radiative lifetime from measurements is significantly prolonged by the number of photon recycling events. [22][23][24] When the radiative lifetimes are not corrected for photon recycling, the internal luminescence quantum efficiencies are underestimated. 25 (iii) If photons created by radiative recombination within the solar cell are reabsorbed (recycled) as opposed to being parasitically absorbed, the open-circuit voltage increases.…”

Impact of superlinear defect-related recombination on LED performance at low injection

“…23 Since our LEDs are grown this way, we assume that the radiative recombination rate in the active QWs is equal to Bn 2 , where B 300 = 1 × 10 −10 cm 3 s −1 is the radiative recombination coefficient at room temperature (300 K) and n is the photoexcited carrier density. 5,6,12 We note that this estimate for B includes corrections that are required to accommodate photon recycling, 24 which will vary with device structure and optical design. This expression for the radiative rate assumes that the generated electron-hole density exceeds the background density of free carriers in the active region of the device, a condition that may be suspect for our lowest generation rates.…”