A study of nitrogen behavior in the formation of Ta/TaN and Ti/TaN alloyed metal electrodes on SiO2 and HfO2 dielectrics

Abstract

Physical and electrical properties of metal gate electrodes on HfO 2 gate dielectrics

Effect of Chelating Agent and Surfactant on TaN CMP in Weakly Alkaline Slurry

“…2 Chemical Mechanical Planarization (CMP) is one of the key processes for IC fabrication, and the only way to achieve global and local planarization.The CMP for TaN chemical behavior has been investigated by many researchers. [3][4][5][6][7][8] S. V. S. B. Janjam 9 studied the TaN removal rate (RR) up to 100 nm /min in solutions using oxalic and tartaric acid as chelating agent and H 2 O 2 as oxidizer. Meanwhile, they also investigated the electrochemical behavior of TaN in solutions of H 2 O 2 and tartaric acid, 10 indicating that the Ta sites of TaN were oxidized to Ta 2 O 5 by O 2 and H 2 O 2 in the solution, followed by structural weakening of the oxide film due to the formation of Ta(OH) 5 and mechanically fragile Ta-tartarate surface complexes.…”

Effect of Nitrogen on the Physical Properties and Work Function of MoNxCap Layers on HfO2Gate Dielectrics

“…Recently, gate structure employing metal bilayer has been proposed. 22 The bilayer structure of metal electrodes using different thickness of cap layers, such as Ta/TaN, 23 Ti/TiN, 23 Al/TiN, 24 Ni/TiN, 24 TaN/Sc, 25 and W/TiN, 26 is a simple method to adjust the effective work function of gate electrode. The effective work function thus becomes tunable over a wide range, which may provide a clue for work function engineering.…”