A study of properties of ZrO₂ thin films deposited by magnetron sputtering under different plasma parameters: Biomedical application

Abstract

ZrO2 thin films were deposited on 316L stainless steel substrate by a radio-frequency magnetron sputtering system. The substrate bias voltage, the working gas rate and the reactive gas fraction in the gas mixture were varied. These variations produce a variation in the deferent properties of the obtained films. The deposited films were characterized by X-Rays Diffraction, Atomic Force Microscopy, nano-indentation and potentiodynamic polarization. The experimental results show that the film thickness and the roughness of the films are highly influenced by the plasma parameters. XRD results show that the monoclinic phase is predominant in unbiased deposited films. The best anti-corrosion performance and hardness were obtained for ZrO2 deposited with a substrate bias voltage of −75 V, Ar rate of 6 sccm and oxygen fraction of 25%.

UV-A Treatment of ZrO2 Thin Films Fabricated by Environmental Friendlier Water-Based Solution Processing: Structural and Optical Studies

“…Zirconia (ZrO 2 ) has emerged as an excellent material due to its unique properties such as wide band gap (3-7.8 eV) [1,2], high level stability (chemical, thermal, and electrical), tuneable conductivity, and high refractive index, making it suitable for high performance bio medical [3], sensing [4,5], catalyst [6] and many more applications. Most important of all, its high dielectric constant has rendered it an ultimate position as a viable substitute for conventional gate dielectric in transistors [7,8] and in storage capacitors [9], for future generation electronic technologies.…”

“…The synthesis of ZrO 2 has been carried out with a variety of techniques based on both vacuum and solution processing [3,[10][11][12]. However, the key point is that tailor-made properties of ZrO 2 thin films can be achieved with the right choice of various factors, in both pre-and post-deposition procedures.…”

Ecofriendly Water-Based Solution Processing: Preliminary Studies of Zn-ZrO2 Thin Films for Microelectronics Applications

“…Zirconia (ZrO 2 ) is not only a wide band gap (3-7.8 eV) [5,6] and highly stable metal oxide, but it exhibits larger values of both refractive index and dielectric constant that make it aptly suitable for a great range of applications. The latter includes transistors [7,8], bio medical applications [9], sensors [10][11][12], and catalysts [13], just to name a few. Doping of ZrO 2 2 of 19 with various materials has attracted a great deal of attention for an improved end product as compared to the pure oxide, since the former can strongly influence physical, chemical, and electronic properties producing high performance for multiple applications.…”

Study of GaN/InGaN Light-Emitting Diodes with Specific Zirconium Oxide (ZrO2) Layers

“…Besides, due to the native behaviors of high dielectric constant, wide band gap (5.8 eV), high transparency, high strength and toughness, excellent thermal and chemical stability, the zirconium oxide (ZrO 2 ) has attracted remarkable intention and has been widely applied in refractory products, ceramics, pigments, coating, electronics, prothesis devices, dental implants, pump seals, valve, oxygen sensors, and fuel cells over the past decades. [37][38][39][40] Furthermore, ZrO 2 thin films prepared by the sputtering approach and used to study the related electrical, optical, wettability properties and fabricate capacitors, memory, and biomedical devices were reported by Yim et al [41][42][43][44][45][46] In this study, a new LED design incorporated with an appropriate ZrO 2 CBL and ZrO 2 SPL is utilized to manufacture a GaN/InGaN LED with good performance. The employment of a ZrO 2 CBL can effectively enhance the CS behavior indicated earlier.…”