A study of SONOS charge loss mechanism after hot-hole stressing using trap-layer engineering and electrical re-fill methods

Hsiao, Yi‐Hsuan; Lue, Hang-Ting; Lee, M.Y.; Huang, Shao-Wei; Chou, Tsung-Yi; Wang, Szu-Yu; Hsieh, Kuang-Yeu; Liu, Rich; Lu, Chih‐Yuan

doi:10.1109/relphy.2008.4558993

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A study of SONOS charge loss mechanism after hot-hole stressing using trap-layer engineering and electrical re-fill methods

Cited by 4 publications

References 1 publication

Study of charge loss mechanisms for nano-sized localized trapping SONOS memory devices

Study of charge loss mechanisms for nano-sized localized trapping SONOS memory devices

Integration of High-$\kappa$ Dielectrics and Metal Gate on Gate-All-Around Si-Nanowire-Based Architecture for High-Speed Nonvolatile Charge-Trapping Memory

Relaxation of localized charge in trapping-based nonvolatile memory devices

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