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Cited by 6 publications
(1 citation statement)
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“…Also, the inversion region drain current is lower for the 3D case than the 2D case. These differences may be due to the corner effect [13]. The effective surface-gate channel width for the 3D case is slightly narrowed with "turn-off" lateral gate bias voltage, in comparison with the conventional MOSFET for the 2D case.…”
Section: D -V G Static Characteristicsmentioning
confidence: 98%
“…Also, the inversion region drain current is lower for the 3D case than the 2D case. These differences may be due to the corner effect [13]. The effective surface-gate channel width for the 3D case is slightly narrowed with "turn-off" lateral gate bias voltage, in comparison with the conventional MOSFET for the 2D case.…”
Section: D -V G Static Characteristicsmentioning
confidence: 98%
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