A study of the DC and RF degradation of Be-doped AlGaAs/GaAs HBTs under constant current stress

Borgarino, M.; Menozzi, Roberto; Tasselli, Josiane; Marty, A.; Fantini, Fausto

doi:10.1109/gaasrw.1997.656113

Cited by 6 publications

(1 citation statement)

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“…A problem therefore arises when accelerated lifetime stress experiments have to be designed and their results interpreted, because a trustworthy extrapolation of the stress results to standard operating conditions requires that the effects of the junction temperature be separated from those of the collector current density. In principle, this can be done by using pulsed stress excitation instead of DC or CW techniques [24]. However, for the pulsed stress procedure to be suitably designed, prior knowledge is necessary of the time-dependent self-heating behavior of the devices under test, in the particular packaging and mounting configuration to be used for reliability evaluation.…”

Section: Introductionmentioning

confidence: 99%

Dynamic thermal characterization and modeling of packaged AlGaAs/GaAs HBTs

Busani

Menozzi²,

Borgarino³

et al. 2000

IEEE Trans. Comp. Packag. Technol.

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In this work we show a method for the thermal dynamic modeling of packaged HBT's. The method employs a calibration step featuring pulsed measurements at different temperatures, and is based upon a 3-stage thermal resistance-capacitance model that describes the chip-solder-case system. A current pulse generator was designed and assembled in-house for pulsed characterization down to the microsecond range. The model was used to simulate the thermal transients of the collector current from the microsecond range to hundreds of seconds, for several different bias points in the forward active region, consistently showing a good match with the measured characteristics.

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Section: Introductionmentioning

confidence: 99%