A study of the morphology of GaN seed layers on in situ deposited SixNy and its effect on properties of overgrown GaN epilayers

Youngjoo, Moon; Xie, Jinqiao; Liu, C.; Fu, Y.; Ni, X.; Bıyıklı, Necmi; Zhu, Kai; Yun, Feng; Morkoç̌, H.; Sagar, Ashutosh; Feenstra, R. M.

doi:10.1016/j.jcrysgro.2006.03.010

Cited by 13 publications

(12 citation statements)

References 25 publications

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“…11 The dislocation bending strongly depends on the GaN seed growth conditions in the second step. If the seed layers were grown at low pressures ͑e.g., 30 Torr͒, as in our earlier study on SiC substrates, 6,12 the island density would be high and uniform, and all islands would have a small height to base ratio. 10 However, at a higher pressure ͑e.g., 200 Torr used in this study͒, the seed density is relatively low, and GaN islands have a larger height to base ratio and ͑1101͒ side facets.…”

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confidence: 60%

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Low dislocation densities and long carrier lifetimes in GaN thin films grown on a SiNx nanonetwork

Xie

Özgür

et al. 2007

Applied Physics Letters

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Significant improvement of structural and optical qualities of GaN thin films on sapphire substrates was achieved by metal organic chemical vapor deposition with in situ SiN x nanonetwork. Transmission electron microscope ͑TEM͒ studies revealed that screw-and edge-type dislocations were reduced to 4.4ϫ 10 7 and 1.7ϫ 10 7 cm −2 , respectively, for a ϳ5.5-m-thick layer. Furthermore, room temperature carrier lifetimes of 2.22 and 2.49 ns were measured by time-resolved photoluminescence ͑TRPL͒ for samples containing single and double SiN x network layers, respectively, representing a significant improvement over the previous studies. The consistent trends among the TEM, x-ray diffraction, and TRPL measurements suggest that in situ SiN x network reduces line defects effectively as well as the point-defect-related nonradiative centers.

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confidence: 60%

“…Other details of growth conditions can be found elsewhere. 6 The deposition time of SiN x was varied from 0 min ͑control͒ to 6 min, and the effect of a second SiN x network layer was also studied. For SiN x deposition times of 4.5 min or less, the entire 2 in.…”

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confidence: 99%

Low dislocation densities and long carrier lifetimes in GaN thin films grown on a SiNx nanonetwork

Xie

Özgür

et al. 2007

Applied Physics Letters

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“…The GaN samples were grown on sapphire substrates in a low pressure vertical MOCVD system. 8,9 In this letter, two samples with single ͑5 and 6 min͒ and one with double ͑5 + 5 min͒ SiN x nanonetwork interlayers ͑see Fig. 1͒ were investigated and compared to a standard ELO sample and a control sample without ELO.…”

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Defect reduction in GaN epilayers grown by metal-organic chemical vapor deposition with in situ SiNx nanonetwork

Xie

Chevtchenko

Özgür

et al. 2007

Applied Physics Letters

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Line and point defect reductions in thin GaN epilayers with single and double in situ SiN x nanonetworks on sapphire substrates grown by metal-organic chemical vapor deposition were studied by deep-level transient spectroscopy ͑DLTS͒, augmented by x-ray diffraction ͑XRD͒, and low temperature photoluminescence ͑PL͒. All samples measured by DLTS in the temperature range from 80 to 400 K exhibited trap A ͑peak at ϳ325 K͒ with an activation energy of 0.55-0.58 eV, and trap B ͑peak at ϳ155 K͒ with an activation energy of 0.21-0.28 eV. The concentrations of both traps were much lower for layers with SiN x nanonetwork compared to the reference sample. The lowest concentration was achieved for the sample with 6 min deposition SiN x nanonetwork, which was also lower than that for a sample prepared by conventional epitaxial lateral overgrowth. In concert with the DLTS results, PL and XRD linewidths were reduced for the samples with SiN x network indicating improved material quality. Consistent trend among optical, structural, and DLTS results suggests that SiN x network can effectively reduce both point and line defects.

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“…For realizing the OEIC, laser diode with a long life should be achieved on Si substrate. The Epitaxially Lateral Overgrowth (ELO) technique, which is latterly named microchannel epitaxy (MCE) [1], has been shown effective in obtaining high-quality film with significantly lower dislocation density, such as GaAs on Si [2][3][4][5][6][7][8], InP on Si [9][10][11][12][13][14][15][16][17][18], as well as GaN on sapphire [19][20][21][22][23][24][25][26][27][28][29][30][31][32][33][34]. In particular, GaN films with much lower dislocation density ( $ 10 6 cm À 2 ) have been obtained by MCE technology [19] and GaN-based laser diodes with long lifetime have been realized on such MCE-grown GaN films [21].…”

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Effect of dislocation density on microchannel epitaxy of GaAs on GaAs/Si substrate

Chang

Naritsuka

Nishinaga

2010

Journal of Crystal Growth

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A study of the morphology of GaN seed layers on in situ deposited SixNy and its effect on properties of overgrown GaN epilayers

Cited by 13 publications

References 25 publications

Low dislocation densities and long carrier lifetimes in GaN thin films grown on a SiNx nanonetwork

Low dislocation densities and long carrier lifetimes in GaN thin films grown on a SiNx nanonetwork

Defect reduction in GaN epilayers grown by metal-organic chemical vapor deposition with in situ SiNx nanonetwork

Effect of dislocation density on microchannel epitaxy of GaAs on GaAs/Si substrate

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