A Study of the Performance of an N-Channel MOSFET Under Gamma Radiation as a Dosimeter

Farroh, Hoda A.; Nasr, A.; Sharshar, K.A.A.

doi:10.1007/s11664-020-08330-4

Cited by 13 publications

(5 citation statements)

References 43 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Firstly, the static performance of metal-oxide semiconductor field-effect transistors (MOSFETs) was processed in previous work as in Farroh, et al [2]. However, here another phase that is the dynamic characteristics for different two families of (MOSFETs) is studied under low dose gamma-ray radiation.…”

Section: Introductionmentioning

confidence: 99%

Dynamic Performance Evaluation of N-channel MOSFET under Gamma Irradiation

Sharaf

2024

Arab Journal of Nuclear Sciences and Applications

View full text Add to dashboard Cite

In this manuscript, the experimental studies for two groups, 2N7000 and BS107, of N-channel MOSFET are conducted. Each group, which have two devices from the same type, is exposed to dosages of gamma-ray ionizing radiation. The main objective of this study is to discuss the dynamic performance of these types under low dose ionizing radiation for purpose of usage as a low dose radiation dosimeter. Novelty of this study arisen from that the dynamic parameters such as threshold voltage, rise and fall times, the transconductance and capacitance between different device terminals are investigated. Because of gamma-ray irradiation, the surface and interface charges are arisen into MOSFET region. The threshold voltage is dependent on the MOSFET parameters, as it depends reversely on the oxide capacitance. From the obtained results, the channel width and length play an important role for determining all the dynamic parameters. One can notice that the majority of capacitances values are decreased. Consequently, the threshold voltage is decreased with the increase of radiation dose. From outcomes, the different transconductance values have different comportment according to the channel width and length into these adjacent regions. Generally, it tends to degrade with increasing the gamma-ray irradiation dose. The rise time tends to decrease while fall time tends to increase semi-linearly with increasing dosage values. From digital processing point of view, small shift in the rise or fall time will affect the pulse decision and then the information processing. Finally, one can conclude that n-channel MOSFETs under study not only have a specified response to gamma-ray radiation but also, they give a deterministic performance over the range of dose in this study. Therefore, the n-channel MOSFET under study -for both type number and dose-is a candidate to be a low dose dosimeter for gamma-ray radiation. The obtained dynamic response will be very important for any recent space or ionizing radiation environment and applications.

show abstract

Section: Introductionmentioning

confidence: 99%

Dynamic Performance Evaluation of N-channel MOSFET under Gamma Irradiation

Sharaf

2024

Arab Journal of Nuclear Sciences and Applications

View full text Add to dashboard Cite

show abstract

“…Power MOSFETs attract attention when they are stressed by electric fields [2,3], when they are operating in ionizing radiation fields [4][5][6][7][8], and as potential gamma radiation dosimeters [9][10][11]. Otherwise, many applications of power MOSFETs need to be radiationhardened [12].…”

Section: Introductionmentioning

confidence: 99%

“…There are many investigations of the effect of gamma radiation [9,10,23], protons [5,23], and heavy-ions [6,24] but not the effect of X rays on commercial MOSFETs, to the best of our knowledge. Additionally, their ability to be used as dosimeters of X rays has not been investigated, to our knowledge.…”

Section: Introductionmentioning

confidence: 99%

Commercial P-Channel Power VDMOSFET as X-ray Dosimeter

et al. 2022

View full text Add to dashboard Cite

The possibility of using commercial p-channel power vertical double-diffused metal-oxide-semiconductor field-effect transistors (VDMOSFETs) as X-ray sensors is investigated in this case study. In this aspect, the dependence of sensitivity on both the gate voltage and the mean energy for three X-ray beams is examined. The eight gate voltages from 0 to 21 V are applied, and the dependence of the sensitivity on the gate voltage is well fitted using the proposed equation. Regarding X-ray energy, the sensitivity first increases and then decreases as a consequence of the behavior of the mass energy-absorption coefficients and is the largest for RQR8 beam. As the mass energy-absorption coefficients of SiO2 are not found in the literature, the mass energy-absorption coefficients of silicon are used. The behavior of irradiated transistors during annealing at room temperature without gate polarization is also considered.

show abstract

“…However, for radiation doses used during typical radiotherapy sessions, the possibility of using commercial MOSFETs as dosimeters instead of RADFETs can greatly reduce the cost of the dosimetry system [13]. Nevertheless, achieving such a dosimetry system with commercial MOSFETs [14][15][16][17] requires a reader unit implementing the necessary signal conditioning stages in terms of amplification, filtering and compensation of the temperature effect [7,13,18]. The reader units for these dosimetric systems are usually desktop-based devices [7], which require the use of cables connected to the sensor modules placed on the patient, thus making the process cumbersome and uncomfortable for the patient.…”

Section: Introductionmentioning

confidence: 99%