A Study of the Signal Information by ULV-SEM in Ultra Low Landing Voltage

Abstract

Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.

Origin and suppression of critical deep pit in high-electron-mobility transistor structure using GaN on Si technology with strained-layer superlattice

“…The crystal orientation of AlN was evaluated by lattice analysis of STEM images using the image analysis software ImageJ. 18,19) In order to determine the origin of domains, ULV-SEM [20][21][22] and X-ray photospectroscopy (XPS) analyses of the Al preseeding layer were carried out.…”

Voltage Contrast Imaging with Energy-Controlled Signal in an FE-SEM.

“…It is applied in the field of semiconductor industry such as failure analysis of devices [1]. The VC imaging can be also utilized to clarify compositional differences like the Z contrast imaging with backscattered electron (BSE), when the compositional differences of target materials make the differences of surface potential [2]. Even smaller compositional difference with which identification by Z contrast imaging is difficult, such as polymer and carbon, can be identified by the VC imaging in some cases [3].…”

Advances in Low Voltage Electron Microscopy from Imaging to Analytical Perspective

“…In comparisons to a conventional lower detector, this through-the-lens, or upper detector provides unique advantages in further improving resolution by filtering out SE3 (SEs with a higher energy spread) and BSEs (higher beam interaction volume). With the recent introduction of in-lens top detector a further improvement in the collection efficiency of accelerated SE signals, with low landing voltage, allows significantly improved topmost surface imaging with enhanced elemental contrast [1].…”